The Transactions of The Korean Institute of Electrical Engineers (전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지
DOI QR코드

DOI QR Code

An Analysis for Gate-source Voltage of GaN HEMT Focused on Mutual Switch Effect in Half-Bridge Structure

GaN HEMT를 사용한 Half-Bridge 구조에서의 스위치 상호작용에 의한 게이트 전압분석

  • Chae, Hun-Gyu (Dept. of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Dong-Hee (Dept. of Electrical Engineering, Tongmyong University) ;
  • Kim, Min-Jung (Dept. of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Lee, Byoung Kuk (Dept. of Electrical and Computer Engineering, Sungkyunkwan University)
  • Received : 2016.07.25
  • Accepted : 2016.09.28
  • Published : 2016.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper presents the analysis of the gate-source voltage of the gallium nitride high electronic mobility transistor (GaN HEMT) in the half bridge structure focused on the mutual effects of two switching operation. Especially low side gate-source voltage is analyzed mathematically according to the high side switch turn-on and turn-off operation. Moreover, the influence of each gate resistance and parasitic component on the switching characteristic of other side switch is investigated, and the formula, simulation and experimental results are compared with theoretical data.

Keywords

References

  1. J. Millan, "Survey of Wide Bandgap Power Semiconductor Devices," IEEE Trans. Power Electron. vol. 29, no. 5, pp. 2155-2163, 2014. https://doi.org/10.1109/TPEL.2013.2268900
  2. N. Kminski, "State of the art and the future of wide band gap devices," in Power Electronics and Applications, 2009. EPE '09.13th European Conference on, pp. 1-9, 2009.
  3. J. Wang, R. T. Li and H. S. Chung, "An Investigation into the Effects of the Gate Drive Resistance on the Losses of the MOSFET-Snubber-Diode Configuration," IEEE Trans. Power Electronics, vol. 27, no. 5, pp. 2657-2672, 2012. https://doi.org/10.1109/TPEL.2011.2171723
  4. K. Peng, S. Eskandari, and E. Santi, "Analytical Loss Model for Power Converters with SiC MOSFET and SiC Schottky Diode Pair," in Proc. IEEE Energy Conversion Congress and Exposition (ECCE), pp.6153-6160, 2015
  5. K.Wang, X. Yang. H.C Li, H. Ma, X. Zeng and W. Chen, "An Analytical switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation," IEEE Trans. Power Electron. vol. 31, no. 1, pp. 635-647, 2016. https://doi.org/10.1109/TPEL.2015.2409977
  6. M. Rodriguez, A. Rodriguez, P. F. Miaja, D. G. Lamar and J. S. Zuniga, "An Insight into the Switching Process of Power MOSFETs: An Improved Analytical Losses Model," IEEE Trans. Power Electronics, vol. 25, no. 6, pp. 1626-1640, 2010 https://doi.org/10.1109/TPEL.2010.2040852
  7. M.Danilovic, Z. Chen, R. Wang and F. Luo, D. Borovevich, P. Mattavelli, "Evaluation of the Switching Characteristics of a Gallium-Nitride Transistor," in Proc. IEEE Energy Conversion Congress and Exposition (ECCE), pp. 2681-2688, 2011.
  8. D. Johan, J. Pierre, F. David, "Improvement of GaN Transistors Working Conditions To Increase Efficiency Of A 100W DC-DC Converter," in Proc IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 656-663, 2013.
  9. J. Lautner and B. Piepenbreier, "Analysis of GaN HEMT Switching Behavior," 9th International Conference on Power Elecronics-ECCE Asia (ICPE-ECCE Asia 2015), pp. 567-574, 2015
  10. Texas Instruments, "High Speed PCB Layout Techniques,"