Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns

  • Lee, Woojin (Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.) ;
  • Kim, Tae Hyung (Department of Fusion Chemical Engineering, Hanyang University) ;
  • Choa, Yong-Ho (Department of Fusion Chemical Engineering, Hanyang University)
  • Received : 2016.07.01
  • Accepted : 2016.07.04
  • Published : 2016.08.27
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Abstract

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

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