전자공학회논문지 (Journal of the Institute of Electronics and Information Engineers)

  • 제52권4호
  • /
  • Pages.49-55
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  • 2015
  • /
  • 2287-5026(pISSN)
  • /
  • 2288-159X(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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RF MOSFET의 바이어스 종속 게이트-드레인 오버렙 캐패시턴스의 새로운 SPICE 모델링

New SPICE Modeling for Bias-Dependent Gate-Drain Overlap Capacitance in RF MOSFETs

  • 이상준 (한국외국어대학교 전자공학과) ;
  • 이성현 (한국외국어대학교 전자공학과)
  • Lee, Sangjun (Department of Electronics Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
  • 투고 : 2014.12.01
  • 심사 : 2015.03.30
  • 발행 : 2015.04.25
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초록

기존의 BSIM4 모델과 다이오드를 사용한 BSIM4 Macro 모델의 바이어스 종속 게이트-드레인 오버렙 캐패시턴스 $C_{gdo}$ 시뮬레이션의 부정확성에 대하여 자세히 분석하였다. 이러한 Macro 모델은 기존의 BSIM4 모델보다 더 정확하지만 선형영역에서 사용될 수 없음을 발견하였다. 기존 모델들의 부정확성을 제거하기 위해서 물리적인 바이어스 종속 $C_{gdo}$ 모델 방정식을 사용한 새로운 BSIM4 Macro 모델을 제안하였고 전체 바이어스 영역에서 유효함을 입증하였다.

The inaccuracy of the bias-dependent gate-drain overlap capacitance $C_{gdo}$ simulation in original BSIM4 and BSIM4 macro model using a diode is analyzed in detail. It is found that the accuracy of the macro model is better than of the BSIM4. However, the macro model cannot be used in the linear region. In order to remove the inaccuracy of the conventional models, a new BSIM4 macro model with a physical bias-dependent $C_{gdo}$ equation is proposed and its accuracy is validated in the full bias range.

키워드

참고문헌

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