Transactions on Electrical and Electronic Materials

  • 제15권5호
  • /
  • Pages.257-261
  • /
  • 2014
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

Electrochemical Characterization of Multilayered CdTe/PSS Films Prepared by Electrostatic Self-assembly Method

  • Rabbani, Mohammad Mahbub (Department of Chemistry, Inha University) ;
  • Yeum, Jeong Hyun (Department of Bio-Fibers and Materials Science, Kyungpook National University) ;
  • Kim, Jungsoo (Energy Component and Material R&BD Group, Korea Institute of Industrial Technology) ;
  • Nam, Dae-Geun (Energy Component and Material R&BD Group, Korea Institute of Industrial Technology) ;
  • Oh, Weontae (Department of Materials and Components Engineering, Dong-Eui University)
  • 투고 : 2014.05.23
  • 심사 : 2014.07.02
  • 발행 : 2014.10.25
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Multilayered CdTe/PSS films were prepared by the electrostatic self-assembly method in an aqueous medium. Positively-charged cadmium telluride (CdTe) nanoparticles and anionic polyelectrolyte, poly (sodium 4-styrene sulfonate) (PSS) were assembled alternately in order to build up a multilayered film structure. A linear proportion of absorbance to the number of bilayers suggests that an equal amount of CdTe was adsorbed after each dipping cycle, which resulted in the buildup of a homogenous film. The binding energies of elements (Cd and Te) in multilayered CdTe/PSS film shifted from those of the CdTe nanoparticles in the pure state. This result indicates that the interfacial electron densities were redistributed by the strong electrostatic interaction between the oppositely-charged CdTe and PSS. Electrochemical properties of the multilayered CdTe/PSS films were studied in detail by cyclic voltammetry (CV).

키워드

참고문헌

  1. G. Decher, Science, 277, 1232 (1997). [DOI: http://dx.doi.org/10.1126/science.277.5330.1232].
  2. B. Lehr, M. Seufert, G. Wenz, and G. Decher, Supramol. Sci., 2, 199 (1995). [DOI: http://dx.doi.org/10.1016/0968-5677(96)89676-3].
  3. M. Y. Gao, C. Lesser, S. Kirstein, and H. Mohwald, J. Appl. Phys., 87, 2297 (2000). [DOI: http://dx.doi.org/10.1063/1.372177].
  4. M. Y. Gao, B. Richter, S. Kirstein, and H. Mohwald, J. Phys. Chem. B, 102, 4096 (1998). [DOI: http://dx.doi.org/10.1021/jp980620a].
  5. J. H. Fendler and F. C. Meldrum, Adv. Mater., 7, 607 (1995). [DOI: http://dx.doi.org/10.1002/adma.19950070703].
  6. G. Decher, Y. Lvov, and J. Schmitt, Thin Solid Films, 244, 772 (1994). [DOI: http://dx.doi.org/10.1016/0040-6090(94)90569-X].
  7. X. Zhang, M. Gao, X. X. Kong, Y. P. Sun, and J. C. Shen, J. Chem. Soc. Chem. Commun., 1055 (1994). [DOI: http://dx.doi.org/10.1039/c39940001055].
  8. T. M. Copper, A. L. Campbell, and R. L. Grane, Langmuir, 11, 2713 (1995). [DOI: http://dx.doi.org/10.1021/la00007a061].
  9. M. Y. Gao, B. Richter, and S. Kirstein, Adv. Mater., 9, 802 (1997). [DOI: http://dx.doi.org/10.1002/adma.19970091007].
  10. J. Schmitt, G. Decher, W. J. Dressick, S. L. Brandow, R. E. Geer, R. Shashidhar, and J. M. Calvert, Adv. Mater., 9, 61 (1997). [DOI: http://dx.doi.org/10.1002/adma.19970090114].
  11. A. Wu, J. Lee, and M. F. Rubner, Thin Solid Films, 329, 663 (1998). [DOI: http://dx.doi.org/10.1016/S0040-6090(98)00736-6].
  12. J. H. Burroughes, D.D.C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, and A. B. Holmes, Nature, 347, 539 (1990). [DOI: http://dx.doi.org/10.1038/347539a0].
  13. M. Herold, J. Gmeiner, and M. Schwoerer, Acta. Polym., 45, 392 (1994). [DOI: http://dx.doi.org/10.1002/actp.1994.010450511].
  14. F. Garten, A. Hiberer, F. Cacialli, E. Esselink, and Y. Dam, Adv. Mater., 9, 127 (1997). [DOI: http://dx.doi.org/10.1002/adma.19970090206].
  15. H. Hong, D. Davidov, M. Tarabia, H. Chayet, I. Benjiamin, E. Z. Faraggi, Y. Avny, and R. Neumann, Synth. Met., 85, 1265 (1997). [DOI: http://dx.doi.org/10.1016/S0379-6779(97)80233-0].
  16. S. Noach, E. Z. Faraggi, G. Cohen, Y. Avny, R. Neumann, D. Davidov, and A. Lewis, Appl. Phys. Lett., 69, 3650 (1996). [DOI: http://dx.doi.org/10.1063/1.117012].
  17. H. Mattoussi, L. H. Radzilowski, B. O. Dabbousi, E. L. Thomas, M. G. Bawendi, and M. F. Rubner, J. Appl. Phys., 83, 7965 (1998). [DOI: http://dx.doi.org/10.1063/1.367978].
  18. B.O. Dabbousi, M. G. Bawendi, O. Onitsuka, and M.F. Rubner, Appl. Phys. Lett., 66, 1316 (1995). [DOI: http://dx.doi.org/10.1063/1.113227].
  19. M. C. Schlamp, X. Peng, and A. P. Alivisatos, J. Appl. Phys., 82, 5837 (1997). [DOI: http://dx.doi.org/10.1063/1.366452].
  20. V. L. Colvin, M. C. Schlamp, and A. P. Alivisatos, Nature, 370, 354 (1994). [DOI: http://dx.doi.org/10.1038/370354a0].
  21. Y. Yang, S. Xue, S. Liu, J. Huang, and J. C. Shen, Appl. Phys. Lett., 69, 377 (1996). [DOI: http://dx.doi.org/10.1063/1.118066].
  22. M. M. Rabbani, J. S. Bae, D. Kim, C. H. Ko, D. G. Nam, Y. Kim, J. H. Yeum, and W. Oh, J. Nanosci. Nanotechnol., 11, 6453 (2011). [DOI: http://dx.doi.org/10.1166/jnn.2011.4427].
  23. M. M. Rabbani, D. Kim, H. C. Kim, C. H. Ko, D. G. Nam, Y. M. Yu, Y. D. Park, and W. Oh, Met. Mater. Int., 17, 227 (2011). [DOI: http://dx.doi.org/10.1007/s12540-011-0407-6].
  24. S. N. Sharma, H. Sharma, G. Singh, and S. M. Shivaprasad, Nucl. Instrum. Meth. B, 244, 86 (2006). [DOI: http://dx.doi.org/10.1016/j.nimb.2005.11.014].
  25. G. W. Lee, J. Kim, J. Yoon, J. S. Bae, B. C. Shin, I. S. Kim, W. Oh, and M. Ree, Thin Solid Films, 516, 5781 (2008). [DOI: http://dx.doi.org/10.1016/j.tsf.2007.10.071].
  26. C. Bittencourt, A. Felten, B. Douhard, J. F. Colomer, G. V. Tendeloo, W. Drube, J. Ghijisen, and J. J. Pireaux, Surf. Sci., 601, 2800 (2007). [DOI: http://dx.doi.org/10.1016/j.susc.2006.12.045].
  27. C. Bitterncourt, A. Felten, B. Douhard, J. Ghijsen, R. L. Johnson, W. Drube, and J. J. Pireaux, Chem. Phys., 328, 385 (2006). [DOI: http://dx.doi.org/10.1016/j.chemphys.2006.07.041].
  28. M. M. Rabbani, C. H. Ko, J. S. Bae, J. H. Yeum, I. S. Kim, and W. Oh, Colloids Surface A, 336, 183 (2009). [DOI: http://dx.doi.org/10.1016/j.colsurfa.2008.11.025].
  29. J. Kim, M.M. Rabbani, D. Kim, M. Ree, J. H. Yeum, C. H. Ko, Y. Kim, J. S. Bae, and W. Oh, Curr. Appl. Phys., 10, S201 (2010). [DOI: http://dx.doi.org/10.1016/j.cap.2009.07.034].
  30. S. H. Kim, W. K. Han, and J. H. Lee, Curr. Appl. Phys., 10, S481 (2010). [DOI: http://dx.doi.org/10.1016/j.cap.2010.02.054].
  31. N. Alexeyeva and K. Tammeveski, Anal. Chim. Acta, 618, 140 (2008). [DOI: http://dx.doi.org/10.1016/j.aca.2008.04.056].
  32. M. Al-Ibrahim, H. K. Roth, M. Schroedner, A. Konkin, U. Zhokhavets, G. Gobsch, P. Scharff, and S. Sensfuss, Org. Electron., 6, 65 (2005). [DOI: http://dx.doi.org/10.1016/j.orgel.2005.02.004].
  33. S. W. Hwang and Y. Chen, Macromolecules, 35, 5438 (2002). [DOI: http://dx.doi.org/10.1021/ma012181a].
  34. M. Al-Ibrahim, A. Konkin, H. K. Rotha, D.A.M. Egbe, E. Klemm, U. Zhokhavets, G. Gobsch, and S. Sensfuss, Thin Solid Films, 474, 201 (2005). [DOI: http://dx.doi.org/10.1016/j.tsf.2004.08.188].
  35. W. Shockley and H. J. Queisser, J. Appl. Phys., 32, 510 (1961). [DOI: http://dx.doi.org/10.1063/1.1736034].