Transactions on Electrical and Electronic Materials

  • 제15권5호
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  • Pages.253-256
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  • 2014
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Dependence of Annealing Temperature on Properties of PZT Thin Film Deposited onto SGGG Substrate

  • Im, In-Ho (Department of Electrical Engineering, Shinansan University) ;
  • Chung, Kwang-Hyun (Kyungwon Industry Co., Ltd.) ;
  • Kim, Duk-Hyun (Department of Automatic Electrical Engineering, Yeungnam College of Science & Technology)
  • 투고 : 2014.05.21
  • 심사 : 2014.07.02
  • 발행 : 2014.10.25
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초록

$Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.

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참고문헌

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피인용 문헌

  1. Enhanced Self-Biased Magnetoelectric Coupling in Laser-Annealed Pb(Zr,Ti)O3 Thick Film Deposited on Ni Foil 2018, https://doi.org/10.1021/acsami.7b16706