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Effect of Complexing Agents on Adhesion Strength between Electroless Copper Film and Ta Diffusion Barrier

무전해 구리 도금액에서 착화제가 접합력에 미치는 영향에 대한 고찰

  • Lee, Chang-Myeon (Surface Technology R &BD Group, Korea Institute of Industrial Technology) ;
  • Jeon, Jun-Mi (Surface Technology R &BD Group, Korea Institute of Industrial Technology) ;
  • Hur, Jin-Young (Surface Technology R &BD Group, Korea Institute of Industrial Technology) ;
  • Lee, Hong-Kee (Surface Technology R &BD Group, Korea Institute of Industrial Technology)
  • 이창면 (한국생산기술연구원 표면처리연구실용화그룹) ;
  • 전준미 (한국생산기술연구원 표면처리연구실용화그룹) ;
  • 허진영 (한국생산기술연구원 표면처리연구실용화그룹) ;
  • 이홍기 (한국생산기술연구원 표면처리연구실용화그룹)
  • Received : 2014.07.09
  • Accepted : 2014.08.07
  • Published : 2014.08.30

Abstract

The primary purpose of this research is to investigate how much the complexing agent in electroless Cu electrolytes will affect adhesion strength between copper film and Ta diffusion barrier for Cu interconnect of semiconductor. The adhesion strength using rochelle's salt as complexing agent was higher than the case of using EDTA-4Na. Effect of complexing agent on adhesion strength and electrical resistivity was studied in crystal structural point of view.

Keywords

References

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