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http://dx.doi.org/10.5695/JKISE.2014.47.4.162

Effect of Complexing Agents on Adhesion Strength between Electroless Copper Film and Ta Diffusion Barrier  

Lee, Chang-Myeon (Surface Technology R &BD Group, Korea Institute of Industrial Technology)
Jeon, Jun-Mi (Surface Technology R &BD Group, Korea Institute of Industrial Technology)
Hur, Jin-Young (Surface Technology R &BD Group, Korea Institute of Industrial Technology)
Lee, Hong-Kee (Surface Technology R &BD Group, Korea Institute of Industrial Technology)
Publication Information
Journal of the Korean institute of surface engineering / v.47, no.4, 2014 , pp. 162-167 More about this Journal
Abstract
The primary purpose of this research is to investigate how much the complexing agent in electroless Cu electrolytes will affect adhesion strength between copper film and Ta diffusion barrier for Cu interconnect of semiconductor. The adhesion strength using rochelle's salt as complexing agent was higher than the case of using EDTA-4Na. Effect of complexing agent on adhesion strength and electrical resistivity was studied in crystal structural point of view.
Keywords
Electroless copper; Adhesion strength; Residual stress; Electrical resistivity; Complexing agent;
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