Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thickness Effects of Active Layers on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors

Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 활성층 두께의 영향

  • Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
  • 마대영 (경상대학교 전기공학과 및 공학연구원)
  • Received : 2014.05.07
  • Accepted : 2014.06.18
  • Published : 2014.07.01
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Abstract

Transparent thin film transistors were fabricated on $n^+$-Si wafers coated by $Al_2O_3/SiO_2$. Zinc tin oxide (ZTO) films deposited by rf magnetron sputtering were employed for active layers. The mobility (${\mu}s$), threshold voltage ($V_T$), and subthreshold swing (SS) dependances on ZTO thickness were analyzed. The $V_T$ decreased with increasing ZTO thickness. The ${\mu}s$ raised from $5.1cm^2/Vsec$ to $27.0cm^2/Vsec$ by increasing ZTO thickness from 7 nm to 12 nm, and then decreased with ZTO thickness above 12 nm. The SS was proportional to ZTO thickness.

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References

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