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http://dx.doi.org/10.4313/JKEM.2014.27.7.433

Thickness Effects of Active Layers on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors  

Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.7, 2014 , pp. 433-437 More about this Journal
Abstract
Transparent thin film transistors were fabricated on $n^+$-Si wafers coated by $Al_2O_3/SiO_2$. Zinc tin oxide (ZTO) films deposited by rf magnetron sputtering were employed for active layers. The mobility (${\mu}s$), threshold voltage ($V_T$), and subthreshold swing (SS) dependances on ZTO thickness were analyzed. The $V_T$ decreased with increasing ZTO thickness. The ${\mu}s$ raised from $5.1cm^2/Vsec$ to $27.0cm^2/Vsec$ by increasing ZTO thickness from 7 nm to 12 nm, and then decreased with ZTO thickness above 12 nm. The SS was proportional to ZTO thickness.
Keywords
thin film transistors; Zinc tin oxide; Mobility; Threshold voltage; Subthreshold swing;
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