한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제27권3호
  • /
  • Pages.151-155
  • /
  • 2014
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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InP/ZnSe/ZnS 양자점을 이용한 QD-LED의 전기 및 광학적 특성

Electrical and Optical Characteristics of QD-LEDs Using InP/ZnSe/ZnS Quantum Dot

  • 최재건 (순천향대학교 신소재공학과) ;
  • 문대규 (순천향대학교 신소재공학과)
  • Choi, Jae-Geon (Department of Materials Engineering, Soonchunhyang University) ;
  • Moon, Dae-Gyu (Department of Materials Engineering, Soonchunhyang University)
  • 투고 : 2013.12.09
  • 심사 : 2014.02.18
  • 발행 : 2014.03.01
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초록

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

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