전자공학회논문지 (Journal of the Institute of Electronics and Information Engineers)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지
DOI QR코드

DOI QR Code

Sub-micron MOSFET을 위한 입력 저항의 게이트 핑거 수 종속성 측정 및 분석

Measurement and Analysis of Gate Finger Number Dependence of Input Resistance for Sub-micron MOSFETs

  • 안자현 (한국외국어대학교 전자공학과) ;
  • 이성현 (한국외국어대학교 전자공학과)
  • Ahn, Jahyun (Department of Electronics Engineering, Hankuk University of Foreign Studies) ;
  • Lee, Seonghearn (Department of Electronics Engineering, Hankuk University of Foreign Studies)
  • 투고 : 2014.09.24
  • 심사 : 2014.12.02
  • 발행 : 2014.12.25
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

다양한 게이트 핑거 수(Nf)의 MOSFET에 대한 두 종류의 입력 저항이 $S_{11}$-parameter와 $Z_{11}$-parameter으로부터 변환 되어 저주파 영역에서 측정되었다. 본 연구에서 사용된 $Nf{\leq}64$의 범위에서 $S_{11}$-parameter로부터 추출된 1/Nf 종속 입력저항은 $Z_{11}$-parameter로부터 추출된 입력 저항보다 훨씬 낮은 값을 보여주며, 이러한 1/Nf 종속성은 MOSFET의 등가회로로부터 유도된 Nf 종속 비선형 방정식으로부터 이론적으로 증명하였다.

Two input resistances converted from $S_{11}$-parameter and $Z_{11}$-parameter of MOSFETs with various gate finger numbers Nf were measured in low frequency region. The 1/Nf dependent input resistance from $S_{11}$-parameter exhibits much lower values than that from $Z_{11}$-parameter in the range of $Nf{\leq}64$. This 1/Nf dependence was theoretically verified by using Nf dependent nonlinear equation derived from a MOSFET equivalent circuit.

키워드

참고문헌

  1. C. S. Kim, H. K. Yu, H. Cho, S. Lee, and K. S. Nam, "CMOS layout and bias optimization for RF IC design applications in IEEE MTT-S Int. Microwave Symp. Dig., pp. 945-948, 1997.
  2. Y.-S. Lin and S.-S. Lu, "An analysis small-signal gate-drain resistance effect on RF power MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 2, February 2003.
  3. Y.-S. Lin, "An analysis of small-signal source-body resistance effect on RF MOSFETs for low-cost system-on-chip(SoC) applications," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1442-1451, July 2005. https://doi.org/10.1109/TED.2005.850691
  4. J. Cha, J. Cha, and S. Lee, "Uncertainty analysis of two-step and three-step methods for deembedding on-wafer RF transistor measurements," IEEE Trans. Electron Device, Vol. 55, pp. 2195-2201, 2008. https://doi.org/10.1109/TED.2008.926752
  5. R. Ludwig and G. Bogdanov, RF Circuit Design Theory and Applications, 2nd Edition, Prentice Hall, pp. 182-183, 2010.
  6. S. Lee, C. S. Kim, and H. K. Yu, "A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs," IEEE Trans. Electron Devices, vol. 48, pp. 1374-1379, July 2001. https://doi.org/10.1109/16.930654
  7. J. Kim, Y. Lee, M. Choi, J. Koo, and S. Lee, "Gate-length dependent cutoff frequency extraction for nano-scale MOSFET," Journal of The Institute of Electronics Engineers of Korea - Semiconductor and Devices, vol. 42, no. 12, pp. 1-8, 2005.
  8. Y. Lee, M. Choi, J. Koo, and S. Lee, "Bias and gate-length dependent data extraction of substrate circuit parameters for deep submicron MOSFETs," Journal of The Institute of Electronics Engineers of Korea - Semiconductor and Devices, vol. 41, no. 12, pp. 27-34, 2004.
  9. S.-S. Lu, C. Meng, T.-W. Chen and H.-C. Chen, "The origin of the kink phenomenon of transistor scattering parameter S22," IEEE Transaction on Microwave Theory Techniques, vol. 49, no. 2, pp. 333-340, February 2001. https://doi.org/10.1109/22.903094