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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure

  • Received : 2012.12.14
  • Accepted : 2013.06.19
  • Published : 2013.08.01
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Abstract

In this paper, we demonstrate the capabilities of 380-nm ultraviolet (UV) light-emitting diodes (LEDs) using metal organic chemical vapor deposition. The epi-structure of these LEDs consists of InGaN/AlGaN multiple quantum wells on a patterned sapphire substrate, and the devices are fabricated using a conventional LED process. The LEDs are packaged with a type of surface mount device with Al-metal. A UV LED can emit light at 383.3 nm, and its maximum output power is 118.4 mW at 350 mA.

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References

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