한국전자파학회논문지 (The Journal of Korean Institute of Electromagnetic Engineering and Science)

  • 제24권4호
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  • Pages.394-402
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  • 2013
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  • 1226-3133(pISSN)
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  • 2288-226X(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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GaN HEMT를 이용한 스위칭 모드 전력증폭기 설계 및 전력증폭기의 Ruggedness 특성 분석

The Design of Switching-Mode Power Amplifier and Ruggedness Characteristics Analysis of Power Amplifier Using GaN HEMT

  • 투고 : 2012.12.27
  • 심사 : 2013.03.18
  • 발행 : 2013.04.30
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초록

본 논문은 GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor)를 이용한 S대역 레이더용 전력증폭기 설계하고 제작된 스위칭 모드 전력증폭기의 ruggedness 시험에 관련된 내용을 기술하였다. 고효율 특성을 위해 전력증폭기를 Class-F로 설계하였으며, 측정을 위한 입력 신호는 $100{\mu}s$의 pulse width 및 10 %의 duty cycle인 pulse 신호를 사용하였다. 제작된 Class-F 전력증폭기의 중심 주파수에서 측정한 결과, 8.7 dB의 전력 이득과 42 dBm의 출력 전력, 54.2 %의 전력 부가 효율(PAE) 및 62.6 %의 드레인 효율이 측정되었다. 또한, 전력증폭기의 신뢰성 시험의 일환으로 Ruggedness 시험을 위한 실험 구성을 제안하고, VSWR(Voltage Standing Wave Ratio)을 변화시켜 출력 전력과 효율을 측정하였다. 설계된 전력증폭기가 VSWR 변화에 따라 출력 전력 32.6~41.1 dBm까지 변화하고, 드레인 효율은 23.4~63 %까지 변하는 특성을 얻을 수 있었다.

This paper presents design, fabrication and ruggedness test of switching-mode power amplifier using GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) for S-band radar applications. The power amplifier is designed to Class-F for high efficiency. The input signal for the measurement of the power amplifier is pulse signal at $100{\mu}s$ pulse width and duty cycle of 10 %. The measurement results of the fabricated Class-F power amplifier are a power gain of 10.8 dB, an output power of 40.8 dBm, a power added efficiency(PAE) of 54.2 %, and a drain efficiency of 62.6 %, at the center frequency. We proposed reliability test set-up of a power amplifier for ruggedness test. And we measured output power and efficiency according to VSWR(Voltage Standing Wave Ratio) variation. The designed power amplifier achieved output power of 32.6~41.1 dBm and drain efficiency of 23.4~63 % by changing VSWR, respectively.

키워드

참고문헌

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