JSTS:Journal of Semiconductor Technology and Science

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Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

  • Lee, Hyun Kook (Department of Electronic Engineering, Sogang University) ;
  • Choi, Woo Young (Department of Electronic Engineering, Sogang University)
  • Received : 2013.05.07
  • Accepted : 2013.07.12
  • Published : 2013.12.31
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Abstract

Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and $SiO_2$-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and $SiO_2$-only TFETs. It is because HG TFETs show higher transconductance ($g_m$) and current drivability than $SiO_2$-only TFETs and $g_m$ less sensitive to gate voltage than high-k-only TFETs.

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References

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