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The Korean Institute of Electrical Engineers (대한전기학회)
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The Calculation Method of the Breakdown Voltage for the Drain Region with the Cylindrical Structure in LDMOS

Cylindrical 구조를 갖는 LDMOS의 Drain 역방향 항복전압의 계산 방법

  • Lee, Un Gu (Dept. Information & Communication, Bucheon Univ.)
  • 이은구 (부천대학교 정보통신과)
  • Received : 2012.08.17
  • Accepted : 2012.11.21
  • Published : 2012.12.01
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Abstract

A calculation method of the breakdown voltage for the drain region with the cylindrical structure in LDMOS is proposed. The depletion region of the drain is divided into many smaller regions and the doping concentration of each split region is assumed to be uniformly distributed. The field and potential in each split region is calculated by the integration of the Poisson equation and the ionization integral method is used to compute the breakdown voltage. The breakdown voltage resulted from the proposed method shows the maximum relative error of 2.2% compared with the result of the 2-dimensional device simulation using BANDIS.

Keywords

References

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Cited by

  1. The Calculation Method of the Breakdown Voltage for the Drain Region with the Spherical Structure in High Voltage Analog CMOS vol.62, pp.9, 2013, https://doi.org/10.5370/KIEE.2013.62.9.1255