Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Field Ring Design of 600 V Super Junction Power MOSFET

600 V급 Super Junction MOSFET을 위한 Field Ring 설계의 관한 연구

  • Received : 2012.03.20
  • Accepted : 2012.03.23
  • Published : 2012.04.01
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Abstract

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

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References

  1. E. G. Kang, B. J. Kim, and Y. H. Lee, J. KIEEME, 23, 1 (2010).
  2. A. W. Ludikhuize, IEEE Trans. Electron Devices, 8, 1582 (1991).
  3. D. G. Bae and S. K. Chung, Solid State Electron., 42, 349 (1998). https://doi.org/10.1016/S0038-1101(97)00201-3
  4. C. Y. Chang and C. T. Sune, Elec. Dev. Lett., EDL_7, 35 (1986).
  5. V. Boisson, M. Le Helley, and J. P. Chante, IEEE Trans. Electron Dev., ED_32, 838 (1985).
  6. J. He, M. Chan, X. Zhang, and Y. Wang, Solid State Electron., 50, 1375 (2006). https://doi.org/10.1016/j.sse.2006.06.012