Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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A Study on Indium Gallium Oxide Thin Film Transistors prepared by a Solution-based Deposition Method

저온 용액공정을 이용한 인듐갈륨 산화물(IGO) 박막트랜지스터 제조 및 특성 연구

  • Bae, Eunjin (School of Chemical Engineering, Yeungnam University) ;
  • Lee, Jin Young (School of Chemical Engineering, Yeungnam University) ;
  • Han, Seung-Yeol (School of Chemical, Biological and Environmental Engineering, Oregon State University) ;
  • Chang, Chih-Hung (School of Chemical, Biological and Environmental Engineering, Oregon State University) ;
  • Ryu, Si Ok (School of Chemical Engineering, Yeungnam University)
  • 배은진 (영남대학교 화학공학부) ;
  • 이진영 (영남대학교 화학공학부) ;
  • 한승열 (오래곤주립대학교 화학생물환경공학부) ;
  • ;
  • 류시옥 (영남대학교 화학공학부)
  • Published : 2011.10.01
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Abstract

Solution processed IGO thin films were prepared using a general chemical solution route by spin coating. The effect of the annealing temperature of IGO thin films based on the ratio of 2:1 of indium to gallium on crystallization was investigated with varying annealing temperature from $300^{\circ}C$ to $600^{\circ}C$. The electronic device characteristic of IGO thin film was investigated. The solution-processed IGO TFTs annealed at 300 and $600^{\circ}C$ in air for 1 h exhibited good electronic performances with field effect mobilities as high as 0.34 and 3.83 $cm^2/V{\cdot}s$, respectively. The on/off ratio of the IGO TFT in this work was $10^5$ with 98% transmittance.

본 연구에서는 박막 트랜지스터(TFTs)에 사용 가능한 Indium Gallium 산화물(IGO) 박막을 스핀코팅을 이용한 화학적 용액공정을 사용하여 $SiO_2$/Si 기판 위에 증착시켰다. 또한 IGO 박막을 증착한 후에 이루어지는 열처리 온도가 박막의 결정화에 미치는 영향과 이들의 전기적 특성이 조사되었다. 스핀코팅법에 의한 IGO 박막을 증착하기 위해 사용된 In과 Ga의 비율은 2:1로 고정하였으며, 박막의 열처리 온도는 $300{\sim}600^{\circ}C$의 범위에서 변화시켰다. 공기 중에서 $300^{\circ}C$와 $600^{\circ}C$에서 1시간 동안 열처리한 IGO 박막을 사용하여 제조한 박막 트랜지스터의 전류 이동도(field effect mobility)는 각각 0.34와 3.83 $cm^2/V{\cdot}s$로서 양호한 전자소자의 성능을 보였다. 또한 on/off 전류비(current ratio)는 $10^5$ 이상이었으며, IGO 박막의 평균 투과율은 98%이었다.

Keywords

References

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