Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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Preparation of $WO_3$ Films by CVD and their Application in Electrochromic Devices

화학기상 증착법을 이용하여 제조된 텅스텐 산화막의 전기변색 소자 응용 연구

  • Jung, Hun (Department of Chemical Engineering and The research Institute of Catalysis) ;
  • SunWoo, Changshin (School of Bioscience and Technology, Chonnam National University) ;
  • Kim, Do-Heyoung (Department of Chemical Engineering and The research Institute of Catalysis)
  • 정훈 (전남대학교 응용화학공학부 촉매 연구소) ;
  • 선우창신 (전남대학교 생명과학기술학부) ;
  • 김도형 (전남대학교 응용화학공학부 촉매 연구소)
  • Published : 2011.08.01
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Abstract

A study on chemical vapor deposition(CVD) of $WO_3$ and the electrochromic properties of the CVD $WO_3$ films have been carried out. The crystalinity, purity, and growth rate of the films depending on substrate temperatures are investigated. The highest growth rate is $8{\mu}m/min$ at the substrate temperatures above $300^{\circ}C$ and the estimated activation energy for overall film growth is about 45.9 kJ/mol at the temperatures of $225{\sim}275^{\circ}C$, where the CVD process is controlled by a surface reaction kinetics. The films grown below $275^{\circ}C$ are amorphous, while those deposited above $300^{\circ}C$ are crystalline. The effects of thickness and deposition temperature of the $WO_3$ films on electrochromic activity are also investigated. The coloration efficiency of the films increases with increase in film thickness and decrease in deposition temperature.

본 연구에서는 화학 증착법을 이용하여 텅스텐 산화물을 제조한 후 기판 온도에 따른 성막 특성을 분석하고, 성막 된 텅스텐 산화물을 전기 변색 소자 제조에 응용하여 소자 특성을 살펴보았다. 증착 온도 $300^{\circ}C$ 이상에서 최대 성막속도($8{\mu}m/min$)를 얻을 수 있었으며, $275^{\circ}C$ 이하에서는 표면 반응 율속 특성을 보였고 이때 겉보기 활성화 에너지 값은 45.9 kJ/mol이였다. 성막 된 텅스텐 산화물은 $275^{\circ}C$ 이하에서는 비정질막이, 그 이상 온도에서는 결정질 막이 형성되었다. 전기 변색 소자 적용시 유리한 비정질막이 성막되는 조건에서 증착 온도 및 두께 변화에 따른 전기 변색 특성을 평가하였다. 증착 온도가 동일한 경우 두께가 두꺼울수록 그리고 두께가 일정한 경우는 증착 온도가 낮을수록 변색 효율 측면에서 유리한 결과를 얻었다.

Keywords

References

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