Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Comparison of Stability on the Nano-crystalline Embedded InGaZnO and Amorphous InGaZnO Oxide Thin-film Transistors

나노결정 InGaZnO 산화물 박막트랜지스터와 비결정 InGaZnO 산화물 박막트랜지스터의 소자 신뢰성에 관한 비교 연구

  • Shin, Hyun-Soo (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Ahn, Byung-Du (LCD R&D Center, Samsung Electronics Co., Ltd.) ;
  • Rim, Yoo-Seung (School of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Hyun-Jae (School of Electrical and Electronic Engineering, Yonsei University)
  • 신현수 (연세대학교 전기전자공학과) ;
  • 안병두 (삼성전자주식회사 LCD 사업부) ;
  • 임유승 (연세대학교 전기전자공학과) ;
  • 김현재 (연세대학교 전기전자공학과)
  • Received : 2011.04.05
  • Accepted : 2011.05.13
  • Published : 2011.06.01
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Abstract

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

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