JSTS:Journal of Semiconductor Technology and Science

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Dependency of Tunneling Field-Effect Transistor(TFET) Characteristics on Operation Regions

  • Lee, Min-Jin (Department of Electronic Engineering, R821A, Sogang University) ;
  • Choi, Woo-Young (Department of Electronic Engineering, R821A, Sogang University)
  • Received : 2011.08.02
  • Published : 2011.12.31
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Abstract

In this paper, two competing mechanisms determining drain current of tunneling field-effect transistors (TFETs) have been investigated such as band-to-band tunneling and drift. Based on the results, the characteristics of TFETs have been discussed in the tunneling-dominant and drift-dominant region.

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References

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