Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지
DOI QR코드

DOI QR Code

Analytical Pinning-Voltage Model of a Pinned Photodiode in a CMOS Active Pixel Sensor

  • Lee, Sung-Sik (London Center for Nanotechnology, University College London) ;
  • Nathan, Arokia (London Center for Nanotechnology, University College London) ;
  • Lee, Myung-Lae (Electronics and Telecommunications Research Institute(ETRI)) ;
  • Choi, Chang-Auck (Electronics and Telecommunications Research Institute(ETRI))
  • Received : 2010.07.31
  • Accepted : 2010.12.17
  • Published : 2011.01.31
Download PDF
⟨ Previous Next ⟩

Abstract

An analytical pinning-voltage model of a pinned photodiode has been proposed and derived. The pinning-voltage is calculated using doping profiles based on shallow- and exponential-junction approximations. Therefore, the derived pinning-voltage model is analytically expressed in terms of the process parameters of the implantation. Good agreement between the proposed model and simulated results has been obtained. Consequently, the proposed model can be used to predict the pinning-voltage and related performance of a pinned photodiode in a CMOS active pixel sensor.

Keywords

References

  1. H. Abe, “Device technologies for high quality and smaller pixel in CCD and CMOS image sensors,” in IEDM Dig. Tech. Papers, pp. 989-992, 2004.
  2. K. Findlater, R. Henderson,D, Baxter, et al.,“SXGA pinned photodiode CMOS image sensor in 0.35-${\mu}$m technology,” in ISSCC Dig. Tech. Papers, pp. 218-489, 2003.
  3. K. Mabuchi, N. Nakamura, E. Funatsu, et al., "CMOS image sensors comprised of floating diffusion driving pixels with buried photodiode," IEEE J. Solid-State Circuits, vol. 39, pp. 2408-2416, Dec. 2004. https://doi.org/10.1109/JSSC.2004.837085
  4. J. Lai and A. Nathan, "Reset and partition noise in active pixel image sensors," IEEE Trans. Electron Devices, vol. 52, pp. 2329-2332, Oct. 2005. https://doi.org/10.1109/TED.2005.856192
  5. H. Tian, B. Fowler, and A.E. Gamal, "Analysis of temporal noise in CMOS photodiode active pixel sensor," IEEE J. Solid-State Circuits, vol. 36, pp. 92-101, Jan. 2001. https://doi.org/10.1109/4.896233
  6. T. Lule, S. Benthien, and H. Keller, et al., "Sensitivity of CMOS based imagers and scaling perspectives," IEEE Trans. Electron Devices, vol. 47, pp. 2110-2122, Nov. 2000. https://doi.org/10.1109/16.877173
  7. I. D. Jung, M. K. Cho, K. M. Bae, et al., "Pixelstructured scintillator with polymeric microstructures for X-Ray image sensors," ETRI Journal, vol. 30, no. 5, pp. 747-749, Oct. 2008. https://doi.org/10.4218/etrij.08.0208.0166
  8. G.Dearmaley, J.H.Freeman, R.S.Nelson, et al., "Ionimplantation,” North-Holland, New York, 1973.
  9. R.C. Jaeger, “Introduction to microelectronic fabrication,” Second Edition, Prentice Hall, 2002.
  10. B. Streetman and S. Banerjee, “Solid state electronic devices,” 5th Edition, Prentice Hall.

Cited by

  1. A 3-Gb/s optical detector in standard CMOS for 850-nm optical communication vol.40, pp.8, 2005, https://doi.org/10.1109/JSSC.2005.852030
  2. Extended One-Dimensional Analysis to Effectively Derive Quantum Efficiency of Various CMOS Photodiodes vol.54, pp.10, 2007, https://doi.org/10.1109/TED.2007.904989