Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
권호 표지
DOI QR코드

DOI QR Code

Some Peculiarities of Photo-structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

  • Prikhodko, O. (Department of Kazakh National University) ;
  • Almasov, N. (Department of Kazakh National University) ;
  • Korobova, Natalya (Department of Kazakh National University)
  • Received : 2011.07.22
  • Accepted : 2011.08.18
  • Published : 2011.10.31
Download PDF
⟨ Previous Next ⟩

Abstract

The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

Keywords

References

  1. Mott and E.A. Davis. Electronic Processes in Non-Crystalline substance. Moscow: Mir, 1982, 560p.
  2. Amorphous Semiconductors / Ed. Brodsky M. - Moscow: Mir, 1982, -320 p.
  3. Electronic phenomena in chalcogenide glassy semiconductors /Ed. Tsendin K.D. Moscow: Science 1996, 486p.
  4. Scher H., Montroll E. W. Anomalous transit-time dispersion in amorphous solids // Phys. Rev. - 1975. - Vol.12, No 6. - P. 2455 -2477.
  5. E., Kozakova L. Drift charge carriers in chalcogenide glasses/ in Electronic phenomena in chalcogenide glassy semiconductors.- Ed. Tsendin K.D. Moscow: Science 1996, 486p.