Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Structure-Dependent Subthreshold Swings for Double-gate MOSFETs

  • Han, Ji-Hyeong (Department of Electronic Engineering, Kunsan National University) ;
  • Jung, Hak-Kee (School of Electronic and Information Engineering, Kunsan National University) ;
  • Park, Choon-Shik (Sheenbang Electronics Co., LTD.)
  • Received : 2011.07.23
  • Accepted : 2011.08.18
  • Published : 2011.10.31
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Abstract

In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length $L_g$ is varied from 30nm to 100nm, and channel thickness $t_{si}$ from 15 to 20nm according to channel length, and oxide thickness 5nm to investigate subthreshold swing. The doping of channel is fixed with $10^{16}cm^{-3}$ p-type. The results show good agreement with numerical simulations, confirming this model.

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References

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