[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.6109/jicce.2011.9.5.587

Some Peculiarities of Photo-structural Transformations in Amorphous Chalcogenide Glassy Semiconductor Films

Prikhodko, O. (Department of Kazakh National University)
Almasov, N. (Department of Kazakh National University)
Korobova, Natalya (Department of Kazakh National University)

Publication Information

Journal of information and communication convergence engineering / v.9, no.5, 2011 , pp. 587-590 More about this Journal

Abstract

The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

Keywords

Bipolar drift; charge carriers; amorphous films; chalcogenide glassy semiconductors; ion-plasma sputtering of high-frequency; thermal evaporation;

Citations & Related Records

Reference

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