Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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An Analytical Expression for Current Gain of an IGBT

  • Moon, Jin-Woo (Process Technology Development Korea, Analog Technology Development, Fairchild Semiconductor) ;
  • Chung, Sang-Koo (Division of Computer, Electronic and Communication Engineering, Yanbian University of Science & Technology)
  • Published : 2009.09.01
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Abstract

A simple analytical expression for a current gain of IGBT is derived in terms of the device parameters as well as a gate length dependent parameter, which allows for the determination of the current components of the device as a function of its gate length. The analytical results are compared with those from simulation results. A good agreement is found.

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References

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