[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5370/JEET.2009.4.3.401

An Analytical Expression for Current Gain of an IGBT

Moon, Jin-Woo (Process Technology Development Korea, Analog Technology Development, Fairchild Semiconductor)
Chung, Sang-Koo (Division of Computer, Electronic and Communication Engineering, Yanbian University of Science & Technology)

Publication Information

Journal of Electrical Engineering and Technology / v.4, no.3, 2009 , pp. 401-404 More about this Journal

Abstract

A simple analytical expression for a current gain of IGBT is derived in terms of the device parameters as well as a gate length dependent parameter, which allows for the determination of the current components of the device as a function of its gate length. The analytical results are compared with those from simulation results. A good agreement is found.

Keywords

IGBT; Current Gain; Analytical Expression;

Citations & Related Records

Times Cited By SCOPUS : 1

Reference

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