한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제41권2호
  • /
  • Pages.48-50
  • /
  • 2008
  • /
  • 1225-8024(pISSN)
  • /
  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지
DOI QR코드

DOI QR Code

Solid Phase Crystallization Kinetics of Amorphous Silicon at High Temperatures

  • Hong, Won-Eui (Department of Materials Science and Engineering, Hongik University) ;
  • Kim, Bo-Kyung (Department of Materials Science and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
  • 발행 : 2008.04.30
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Solid phase crystallization (SPC) of amorphous silicon is usually conducted at around $600^{\circ}C$ since it is used in the application of flat panel display using thermally susceptible glass substrate. In this study we conducted SPC experiments at temperatures higher than $600^{\circ}C$ using silicon wafers. Crystallization rate becomes dramatically rapid at higher temperatures since SPC kinetics is controlled by nucleation with high value of activation energy. We report SPC kinetics of high temperatures compared to that of low temperatures.

키워드

참고문헌

  1. M. Wu, K. Pangal, J. C. Sturm, S. Wagner, Appl. Phys. Lett., 75 (1999) 2244 https://doi.org/10.1063/1.124978
  2. R. S. Howell, M. Stewart, S. V. Karnik, S. K. Saha, M. K. Hatalis, IEEE Electron Device Lett., 21 (2000) 70 https://doi.org/10.1109/55.821670
  3. M. Wu, X.-Z. Bo, J. C. Sturm, S. Wagner, IEEE Trans. Electron Devices, 49(11) (2002) 1993 https://doi.org/10.1109/TED.2002.804702
  4. L. Haji, P. Joubert, J. Stoemeons, N. A. Economou, J. Appl. Phys., 75(8) (1994) 3944 https://doi.org/10.1063/1.356014
  5. A. Nakamura, F. Emoto, E. Fujii, A. Yamamoto, Y. Uemoto, K. Senda, G. Kano, J. Appl. Phys., 66(9) (1989) 4248 https://doi.org/10.1063/1.343965
  6. I.-W. Wu, A. Chiang, M. Fuse, L. Ovecoglu, T. Y. Huang, J. Apply. Phys., 65 (1989) 4036 https://doi.org/10.1063/1.343327