Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

A Study on the High Efficiency PR Strip technology by using the Ozone Process

오존공정을 이용한 고효율 PR 제거기술 연구

  • Son, Young-Su (Intelligent & Precision Machinery Research Division, KIMM)
  • 손영수 (한국기계연구원 지능형정밀기계연구본부)
  • Published : 2007.01.25
Download PDF
⟨ Previous Next ⟩

Abstract

we have been studied on the realization of the boundary layer controlled ozone process and related facilities in order to apply for the photo-resist strip process in the semiconductor and flat panel display manufacturing. By means of developing the technology for the high concentration ozone production, it was possible to realized the boundary layer control ozone process by vapor. As a result of the silicon wafer PR strip test, we obtained the strip rate of about 400nm/min at the ozone concentration of 16wt% and flow rate of 8[liter/min.].

반도체 또는 평판디스플레이 제조에 있어 노광공정 후의 PR(photoresist) 제거 공정으로 이용하기 위하여 경계 막 제어에 의한 오존처리공정 및 설비 구현에 대한 연구를 수행하였다. 개발한 초 고농도 오존생성기술과 vapor 발생 방식 경계 막 제어 오존처리공정설비에 의해 실리콘 웨이퍼 PR 제거시험을 수행하였으며 오존가스농도 16wt%, 오존가스 유량 $8[\ell/min]$에서 약 400nm/분의 높은 PR 제거율을 달성하였다.

Keywords

References

  1. S, Nelson, 'Ozonated Water for Wafer Cleaning and Potoresist Removal', Solid State Technology, July, 1999, pp.107-112
  2. J. Cheng, D. Nemeth, 'The Study of Temperature Effect in Photoresist Stripping with DIO3 Process', Technical Report, Akrion, Allentown, PA, April 12, 1999
  3. Bruno Langlais David A,'Ozone in water treatment; application and engineering', American Water Works Association Research Foundation, 1991
  4. J. K. Tong, et al., in Cleaning Technology in Semiconductor Device Manufacturing, J.Ruzyllo and R.E. Novak, Editors, PV 92-12, p.18, The Electrochemical Society Proceedings Series, Pennington, NJ (1992)
  5. J. Wei and S. Verhaverbeke, in Cleaning Technology in Semiconductor Device manufacturing V, The Electrochemical Society, Inc., Pennington, NJ, 1998, pp.496-504
  6. 손영수, 함상용, 문세호,'반도체 웨이퍼의 오존 수세정을 위한 고농도 오존발생장치 특성연구', 대한전기학회논문지 Vol. 52C, No.12, pp.579-586, 2003
  7. 채상훈, 손영수 '오존수를 이용한 감광막 제거공정에 관한 연구', 한국전기전자재료학회 논문지 Vol.17, No.11, p.1143-1148, November 2004 https://doi.org/10.4313/JKEM.2004.17.11.1143
  8. S. De Gendt, J. Wauters adn M. Heyns, A novel photoresist and Post-Etch Residue Removal Process Using Ozonated Chemistry, Solid State Technology, December, 1998, pp.57-60
  9. Toshikazu Abe, Senji Ojima, et al, 'Photoresist Stripping Using Alkaline Accelerator Containing Wet-Vapor', Solid State Phenomena Vols. 76-77, pp.231-234, 2001
  10. 손영수, 채상훈 'PR제거공정 적용을 위한 오존 수 생성기술 연구', 대한전자공학회 논문지 Vol.41, SD No.12, p.1107-1114, December 2004