Journal of information and communication convergence engineering

  • 제5권2호
  • /
  • Pages.109-111
  • /
  • 2007
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  • 2234-8255(pISSN)
  • /
  • 2234-8883(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
권호 표지

Characterization of Ultrathin Gate Dielectrics for Nanoscale CMOS Applications

  • Yoon, Gi-Wan (School of Engineering, Information and Communication University(ICU)) ;
  • Mai, Linh (School of Engineering, Information and Communication University(ICU)) ;
  • Lee, Jae-Young (School of Engineering, Information and Communication University(ICU))
  • 발행 : 2007.06.30
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초록

In this paper, MOS devices with ultrathin gate dielectrics (5.5 nm) are characterized and compared with those with conventional oxides particularly for nanoscale CMOS applications. Nitrogen concentrations and profiles in the nitride gate dielectrics were obtained that will play an important role in improving both hot-carrier lifetime and resistance to boron penetration. This approach seems very useful for future nanoscale CMOS device applications.

키워드

참고문헌

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