• Journal of information and communication convergence engineering
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• v.5 no.2
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• pp.109-111
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• 2007

In this paper, MOS devices with ultrathin gate dielectrics (5.5 nm) are characterized and compared with those with conventional oxides particularly for nanoscale CMOS applications. Nitrogen concentrations and profiles in the nitride gate dielectrics were obtained that will play an important role in improving both hot-carrier lifetime and resistance to boron penetration. This approach seems very useful for future nanoscale CMOS device applications.