Transactions on Electrical and Electronic Materials

  • 제8권1호
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  • Pages.1-4
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  • 2007
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Alternative Optimization Techniques for Shallow Trench Isolation and Replacement Gate Technology Chemical Mechanical Planarization

  • Stefanova, Y. (Institute for Semiconductor Technology, Darmstadt University of Technology) ;
  • Cilek, F. (Institute for Semiconductor Technology, Darmstadt University of Technology) ;
  • Endres, R. (Institute for Semiconductor Technology, Darmstadt University of Technology) ;
  • Schwalke, U. (Institute for Semiconductor Technology, Darmstadt University of Technology)
  • 발행 : 2007.02.28
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초록

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

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참고문헌

  1. K. Derbyshire, 'Making CMP work', Semiconductor magazine, Vol. 3, 7, 2002
  2. Y. Chen, P. Gupta, and A. Kahng, 'Performance-Impact Limited Area Fill Synthesis', Design Automation Conference 2003, Anaheim, CA, USA
  3. Y. Stefanov, T. Ruland, and U. Schwalke, 'Electrical AFM Measurements for Evaluation of Nitride Erosion in Shallow Trench Isolation Chemical Mechanical Planarization', 2004 MRS Fall Meeting, Boston, MA, USA

피인용 문헌

  1. Effect of Pad Surface Micro-Texture on Coefficient of Friction and Removal Rate during Copper CMP Process vol.14, pp.5, 2011, https://doi.org/10.1149/1.3555072
  2. Aggressive Diamond Characterization and Wear Analysis during Chemical Mechanical Planarization vol.2, pp.1, 2013, https://doi.org/10.1149/2.036301jss