Transactions on Electrical and Electronic Materials

  • 제7권4호
  • /
  • Pages.167-172
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  • 2006
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Effect of Particle Size of Ceria Coated Silica and Polishing Pressure on Chemical Mechanical Polishing of Oxide Film

  • Kim, Hwan-Chul (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech.) ;
  • Lim, Hyung-Mi (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech.) ;
  • Kim, Dae-Sung (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech.) ;
  • Lee, Seung-Ho (Composite Materials Center, Korea Institute of Ceramic Eng. & Tech.)
  • 발행 : 2006.08.01
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초록

Submicron colloidal silica coated with ceria were prepared by mixing of silica and nano ceria particles and modified by hydrothermal reaction. The polishing efficiency of the ceria coated silica slurry was tested over oxide film on silicon wafer. By changing the polishing pressure in the range of $140{\sim}420g/cm^2$ with the ceria coated silica slurries in $100{\sim}300nm$, rates, WIWNU and friction force were measured. The removal rate was in the order of 200, 100, and 300 nm size silica coated with ceria. It was known that the smaller particle size gives the higher removal rate with higher contact area in Cu slurry. In the case of oxide film, the indentation volume as well as contact area gives effect on the removal rate depending on the size of abrasives. The indentation volume increase with the size of abrasive particles, which results to higher removal rate. The highest removal rate in 200 nm silica core coated with ceria is discussed as proper combination of indentation and contact area effect.

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참고문헌

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피인용 문헌

  1. A Study of the Colloidal Stability of Mixed Abrasive Slurries and Their Role in CMP vol.159, pp.5, 2012, https://doi.org/10.1149/2.jes113470