Transactions on Electrical and Electronic Materials

  • 제7권4호
  • /
  • Pages.163-166
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  • 2006
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Dishing and Erosion Evaluations of Tungsten CMP Slurry in the Orbital Polishing System

  • Lee, Sang-Ho (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Kang, Young-Jae (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Park, Jin-Goo (Division of Materials and Chemical Engineering, Hanyang University) ;
  • Kwon, Pan-Ki (CMP division, Doosan DND Co., Ltd.) ;
  • Kim, Chang-Il (CMP division, Doosan DND Co., Ltd.) ;
  • Oh, Chan-Kwon (CMP division, Doosan DND Co., Ltd.) ;
  • Kim, Soo-Myoung (CMP division, Doosan DND Co., Ltd.) ;
  • Jhon, Myung-S. (CMP division, Doosan DND Co., Ltd.) ;
  • Hur, Se-An (Cabot Microelectronics Korea) ;
  • Kim, Young-Jung (Cabot Microelectronics Korea) ;
  • Kim, Bong-Ho (Cabot Microelectronics Korea)
  • 발행 : 2006.08.01
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초록

The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.

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참고문헌

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