Effects of Thermal Treatment on the Characteristics of Spiral Inductors on Bragg Reflectors

  • Mai, Linh (School of Information and Communications University (ICU)) ;
  • Lee, Jae-Young (School of Information and Communications University (ICU)) ;
  • Le, Minh-Tuan (School of Information and Communications University (ICU)) ;
  • Pham, Van-Su (School of Information and Communications University (ICU)) ;
  • Yoon, Gi-Wan (School of Information and Communications University (ICU))
  • Published : 2006.12.30

Abstract

This paper presents the thermal technique to improve characteristic of planar spiral inductors. The spiral inductors were fabricated on silicon dioxide/silicon (SiO2/Si) wafer. The thermal treatment was done by annealing processes. The measure results showed a considerable improvement of return loss (Sl1). This thermal treatment seems very promising for enhancing spiral inductors based RF IC's.

Keywords

References

  1. C.P. Yue, S.S. Wong, Physical modeling of spiral inductors on silicon, IEEE Trans. Electron Devices, 47 (2000), 560-568 https://doi.org/10.1109/16.824729
  2. C.J. Chao, S.C.Wong, C.H.Kao, M.J. Chen, Characterization and modeling of on-chip spiral inductors for Si RF ICs, IEEE Trans. on Semiconductor Manufacturing 15 (2002), 19-29 https://doi.org/10.1109/TSM.2002.983440
  3. J.N. Burghartz, D.C. Edelstein, M. Soyuer, H.A. Ainspan, K.A. Jenkin, RF circuit design aspects of spiral inductors on silicon, IEEE Journal of Solid State Circuits 33 (1998), 2028-2034 https://doi.org/10.1109/4.735544
  4. K.B. Ashby, W.C. Finley, J.J Bastek, S. Moinian and I.A. Koullias, 'High Q inductors for wireless applications in a complementary silicon bipolar process,' IEEE Journal of Solid-State Circuits Vol. 31. No. 1. (1996), pp. 4-9 https://doi.org/10.1109/4.485838
  5. L. Zu, Y. Lu, R.C. Frye, M.Y. Law, S. Chen, D. Kossiva, J. Lin, and K.L. Tai, 'High-Q factor inductors integrated on MCM Si substrates,' IEEE Trans. on Components, Packaging and Manufacturing Tech., part B: Advanced Packaging, Vol. 19, No.3, (1996), 635-643 https://doi.org/10.1109/96.533907
  6. J.Y. -C.Chang and A.A. Abidi, 'Large suspended inductors on silicon and their use in a 2$\mu$m CMOS RF amplifier,' IEEE Electron Device Letters, Vol. 14, No.5, 1993, 246-248 https://doi.org/10.1109/55.215182