Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Vth Compensation Current Source with Poly-Si TFT for System-On-Panel

System-On-Panel을 위한 Poly-Si TFT Vth보상 전류원

  • Published : 2006.10.25
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Abstract

We developed a constant current source which is insensitive to threshold voltage variation caused by irregular grain boundary distribution in polycrystalline silicon. The proposed current source has superior saturation characteristics over wide range of input voltages as well as small current error compared to the previously reported Vth compensated sources. We measured the circuit performance and error in current due to parameter variation by using HSPICE.

본 논문에서는 Poly-Si의 불규칙한 Grain boundary 분포로 인해 발생하는 문턱전압의 변화에 대해서도 일정한 전류를 흘려줄 수 있는 전류원을 제안하였다. 기존의 문턱전압 보상 전류원에 비해 넓은 입력전압 범위에서도 포화영역의 특성이 매우 향상되었으며 문턱전압의 변화에 따른 전류의 오차를 감소시킬 수 있었다. 마지막으로 HSPICE 시뮬레이션 과정을 통해 Poly-Si TFT의 특성곡선과 제안된 전류원의 특성곡선을 비교하였으며 각각의 입력전압에 대한 문턱전압의 변화에 따른 출력전류의 상대오차를 측정하였다.

Keywords

References

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