DOI QR코드

DOI QR Code

An Investigation of Locally Trapped Charge Distribution using the Charge Pumping Method in the Two-bit SONOS Cell

  • An, Ho-Myoung (Department of Semiconductor and New Materials Engineering, Kwangwoon University) ;
  • Lee, Myung-Shik (Department of Semiconductor and New Materials Engineering, Kwangwoon University) ;
  • Seo, Kwang-Yell (Department of Semiconductor and New Materials Engineering, Kwangwoon University) ;
  • Kim, Byung-Cheul (Department of Electronic Engineering, Jinju National University) ;
  • Kim, Joo-Yeon (School of Electricity and Electronics, Ulsan College)
  • Published : 2004.08.01

Abstract

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.

Keywords

References

  1. J. Bu and M. H. White, 'Retention reliability enhanced SONOS NVSM with scaled programming voltage', IEEE Aerospace Conference Proceedings, Vol. 5, p. 2383, 2002
  2. B. C. Kim and K. Y. Seo, 'The improved electrical endurance(Program/Erase Cycles) characteristics of SONOS nonvoltatile memory device', J. of KIEEME(in Korean), Vol. 16, No.1, p. 5, 2003
  3. B. C. Kim and K. Y. Seo, 'High density and low voltage programmable scaled SONOS nonvolatile memory for the byte and flash-erased type EEPROM', J. of KIEEME(in Korean), Vol. 41, No.6, p. 945, 2002
  4. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, 'NROM: a novel localized trapping, 2-bit nonvolatile memory cell', IEEE Electron Dev. Lett., Vol. 21, No. 11, p. 543, 2000 https://doi.org/10.1109/55.877205
  5. M. Rosmeulen, I. Crupi, J. Van Houdt, and K. De Meyer, 'Spatial characterization of the local chargedistribution in silicon-rich-oxide channel-hot-elec tron injection based non-volatile-memory cells using the charge pumping technique', IEEE Non-volatile Semiconductor Memory Workshop, p. 81. 2003
  6. C. Chen and T. P. Ma, 'Analysis of enhanced hot-carrier effects in scaled flash memory devices', IEEE Trans. Electron. Dev., Vol. 45, No.7, p. 512, 1998 https://doi.org/10.1109/16.658688
  7. H. M. An, T. H. Han, and K. Y. Seo. 'New erase charateristics for a two-bit SONOS flash memory', J. Korean Phys. Soc., Vol. 43, No.5, p. 873, 2003
  8. Ze. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, 'Metal nanocrystal memories-part II: electrical characteristics' IEEE Trans. Electron Dev., Vol. 49, No.9, p. 1614,2002 https://doi.org/10.1109/TED.2002.802618
  9. M. Tsuchiaki, H. Hara, T. Morimot, and H. Iwai, 'A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFET's', IEEE Trans. Electron Dev., Vol. 40, No. 10, p. 1768, 1993 https://doi.org/10.1109/16.277333