Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical and Optical Properties of ITO Films Sputtered by RF -bias Voltage and In-Sn Alloy Target

  • Kim, Hyun-Hoo (Digital Electronic Department, Doowon Technical College) ;
  • Shin, Sung-Ho (Energy and Resources Standards Division, Agency for Technology and Standards)
  • Published : 2004.08.01
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Abstract

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

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References

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