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http://dx.doi.org/10.4313/TEEM.2004.5.4.148

An Investigation of Locally Trapped Charge Distribution using the Charge Pumping Method in the Two-bit SONOS Cell  

An, Ho-Myoung (Department of Semiconductor and New Materials Engineering, Kwangwoon University)
Lee, Myung-Shik (Department of Semiconductor and New Materials Engineering, Kwangwoon University)
Seo, Kwang-Yell (Department of Semiconductor and New Materials Engineering, Kwangwoon University)
Kim, Byung-Cheul (Department of Electronic Engineering, Jinju National University)
Kim, Joo-Yeon (School of Electricity and Electronics, Ulsan College)
Publication Information
Transactions on Electrical and Electronic Materials / v.5, no.4, 2004 , pp. 148-152 More about this Journal
Abstract
The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.
Keywords
SONOS; Flash memory; Charge pumping method; Locally trapped-charges; Two-bit storage;
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1 B. C. Kim and K. Y. Seo, 'High density and low voltage programmable scaled SONOS nonvolatile memory for the byte and flash-erased type EEPROM', J. of KIEEME(in Korean), Vol. 41, No.6, p. 945, 2002
2 B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, 'NROM: a novel localized trapping, 2-bit nonvolatile memory cell', IEEE Electron Dev. Lett., Vol. 21, No. 11, p. 543, 2000   DOI   ScienceOn
3 M. Rosmeulen, I. Crupi, J. Van Houdt, and K. De Meyer, 'Spatial characterization of the local chargedistribution in silicon-rich-oxide channel-hot-elec tron injection based non-volatile-memory cells using the charge pumping technique', IEEE Non-volatile Semiconductor Memory Workshop, p. 81. 2003
4 C. Chen and T. P. Ma, 'Analysis of enhanced hot-carrier effects in scaled flash memory devices', IEEE Trans. Electron. Dev., Vol. 45, No.7, p. 512, 1998   DOI   ScienceOn
5 H. M. An, T. H. Han, and K. Y. Seo. 'New erase charateristics for a two-bit SONOS flash memory', J. Korean Phys. Soc., Vol. 43, No.5, p. 873, 2003
6 Ze. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, 'Metal nanocrystal memories-part II: electrical characteristics' IEEE Trans. Electron Dev., Vol. 49, No.9, p. 1614,2002   DOI   ScienceOn
7 M. Tsuchiaki, H. Hara, T. Morimot, and H. Iwai, 'A new charge pumping method for determining the spatial distribution of hot-carrier-induced fixed charge in p-MOSFET's', IEEE Trans. Electron Dev., Vol. 40, No. 10, p. 1768, 1993   DOI   ScienceOn
8 B. C. Kim and K. Y. Seo, 'The improved electrical endurance(Program/Erase Cycles) characteristics of SONOS nonvoltatile memory device', J. of KIEEME(in Korean), Vol. 16, No.1, p. 5, 2003
9 J. Bu and M. H. White, 'Retention reliability enhanced SONOS NVSM with scaled programming voltage', IEEE Aerospace Conference Proceedings, Vol. 5, p. 2383, 2002