실리콘 산화후막 공정과 Cu-BCB 공정을 이용한 고성능 수동 집적회로의 구현과 성능 측정

Implementation of High-Quality Si Integrated Passive Devices using Thick Oxidation/Cu-BCB Process and Their RF Performance

  • 발행 : 2004.05.01

초록

Cu 및 BCB 공정을 사용하여 고성능 RF 수동회로를 실리콘 기판 상에 구현하는 RF 수동 집적회로 공정을 개발하였다. 이러한 기술은 개별 수동소자를 통한 모듈 구현방식보다 훨씬 작고 저렴하며 우수한 성능의 RF모듈을 구현할 수 있게 하였다. 개발된 실리콘 수동 집적회로 공정으로 제작된 내경 225 um, 회전수 2.5의 인덕터는 2.7 nH의 인덕턴스를 가지며 1 ㎓ 이상에서 30 이상의 품질계수를 가지는 것으로 측정되었다. 또한 개발된 인덕터를 사용하여 WLCSP(Wafer Level Chip Scale Package) 형태의 수동회로를 제작하였다. 제작된 저역 여파기는 2차 고조파 억제를 위해 인덕터 내경 안에 병렬공진용 커패시터를 삽입하였고 2.45 ㎓에서 0.5 ㏈ 이하의 삽입손실을 보였다. 그리고 고역 여파기와 저역 여파기 구조를 가지는 발룬 회로는 2.45 ㎓에서 0.5 ㏈ 이하의 삽입손실과 182도의 출력 단자간 위상 차이를 보여주었다.

High-performance Si integrated passive process was developed using thick oxidation process and Cu-BCB process. This passive process leads to low-cost and high-quality RF module with a small form factor. The fabricated spiral inductor with 225 um inner diameter and 2.5 turns showed the inductance of 2.7 nH and the quality factor more than 30 in the frequency region of 1 ㎓ and above. Also WLCSP-type integrated passive devices were fabricated using the high-performance spiral inductors. The fabricated low pass filter had a parallel-resonance circuit inside the spiral inductor to suppress 2nd harmonics and showed about 0.5 ㏈ insertion loss at 2.45 ㎓. And also the high/low-pass balun had the insertion loss less than 0.5 ㏈ and the phase difference of 182 degrees at 2.45 ㎓.

키워드

참고문헌

  1. IEEE Trans. Microwave Theory and Techniques v.49 no.10 High Q LTCC-based passive library for wireless system-on-package(SOP) module development A.Sutono;D.Heo;Y.J.Emery Chen;J.Laskar https://doi.org/10.1109/22.954775
  2. IEEE Trans Components, Packaging and Manufacturing Technology v.24 no.3 Multiplayer thin-film MCM-D for the integration of high-perfomance RF and microwave circuits G.Carchon;K.Vassen;S.Brebels;W.De Raedt;E.Beybe;B.Nauwelalers https://doi.org/10.1109/6144.946500
  3. IEDM Tech Digest Monolithic planar inductor and waveguide substrate on silicon with performance comparable to those in GaAs MMIC B.K.Kim;B.K.Ko;K.Lee
  4. IEEE Microwave Guoded Wave Letters v.7 no.8 High performance planar inductor on oxidized porous silicon (OPS)substrate Choong-Mo Nam;Young-Se Kwon https://doi.org/10.1109/75.605489
  5. 2002 IEEE International Microwave Symposium High performance RF passive integration on Si smart substrate Dong-Wook Kim;In-Ho Jeong Lee;Choong-Mo Nam;Young-Se Kwon
  6. IEEE MIT-S International Microwave sym. Digest CMOS RF circuit for integrted wireless systems Robert H. Cavely;Scott Smith, Jjangang Hu;Robert nochols
  7. Proceeding of the IEEE Bipolar/BiCMOS Circuits and Technology CMOS-only RF and baseband circuits for a monolithic 900 MHz wireless transceivers A.Abidi
  8. IEEE ISSCC Dig. Tech. Papers 1.9 GHz Si direct conversion receiver IC for QPSK modulation systems C.Takahashi;R.Fujimoto,S.;Arai,T.;Itakura;T.Ueno;H.Tsurumi;H.Tanimoto;S.Watanabe;K.Hirakawa
  9. 2002 IEEE international Microwave Symposium Design of an LTCC integrated tri-band direct conversion receiver front-end module R.Lucero;A.Pavio;D.Penunuri;J.Bost
  10. 2002 IEEE International Microwave Symposium 3D integrated LTCC module using uBGA technology for compact C-band RF front-end module S.Pinel;S.Chalraborty;M.Roelling;R.Kunze;S.Mandal;H.Liang;C.H.Lee;R.Li;K.Lim;G.White;M.Tentzeris;J.Laskar
  11. IEEE Microwave and Guided Wave Letters v.7 no.2 High Q CMOS-com-patible microwave inductors using double-metal interconnection silicon technology Min Park;Seongheam Lee;Hyun Kyu Yu;Jin Gun Koo;Kee Soo Nam https://doi.org/10.1109/75.553054
  12. Triquint: GaAs Foundry Manual.
  13. IEEE Trans. Microwave Theory and Techniques v.49 no.2 Modeling of monolithic RF spiral transmission-line balun Yeong J.Yoon;Yicheng Lu;Robert C. Frye;Peter R. Smith https://doi.org/10.1109/22.903105
  14. IEEE Microwave Guided Wave Letters v.7 no.8 Lumped-element compensated high low pass balun design for MMIC double-balanced mixer Hwann-Kaeo Chiou;Hao-Hsiung Lin;Chi-Yang Chang https://doi.org/10.1109/75.605493