• The Journal of Natural Sciences
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• v.10 no.1
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• pp.93-102
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• 1998

In order to study on the bleaching efficiency of flex fabrics, ozone which has been produced by an ozone generator, has been contacted with flex fabrics in water at various conditions. The equipments used for the ozone reatment of flex fabrics were the ozone generator and a liquor/ozone contactor. For the study of the bleaching efficiency on flex fabrics, the Hunter's whiteness, tensile strength, microscopic properties of the ozone treated flex fabrics were measured. The concentration of generated ozone was increased, as the voltage increase, flow ratio decrease and oxygen amount increase. The bleaching efficiency of ozone treated fabrics was increased with increasing the net concentration of ozone. The whiteness ozone of treated fabrics was found to be best when treated temperature was $0-15^{\circ}C$ and treated time was 20 min. The tensile strength of treated fabrics decreased as the treating time increased, and as the temperature raised.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.