Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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MOCVD of GaN Films on Si Substrates Using a New Single Precursor

  • Song, Seon-Mi (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Lee, Sun-Sook (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Yu, Seung-Ho (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Chung, Taek-Mo (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Chang-Gyoun (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Lee, Soon-Bo (Department of Chemistry, School of Molecular Science-BK21, Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University) ;
  • Kim, Yun-Soo (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology)
  • Published : 2003.07.20
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Abstract

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

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