• Biotechnology and Bioprocess Engineering:BBE
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• v.1 no.1
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• pp.9-12
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• 1996

In order to produce the single chain precursor of a novel human insulin analogue, (B30-Homoserine) insulin, the fermentative behaviors of Escherichia coli JM103 were studied, which harbors pKBA plasmid carrying a hybrid gene in which the gene for a single chain precursor was fused with lacZ gene under tac promoter. The maximal induction of gene expression was achieved when more than 0.05 mM of isopropyl-$\beta$-D-thiogalactopyranoside(IPTG) was supplemented to fermentation medium after 4 h cultivation of E. coli, and followed by longer than 2-h fermentation. The hybrid protein of the single chain insulin precursor was isolated from cytoplasmic inclusion bodies by dissolving in 8M urea solution, and purified through DEAE-Sephacel and Sephadex G-200 column chromatographies with a recovery of 35%. The finally purified hybrid protein showed a single band on sodium dodecyl sulfate-polyacrylamide gel.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.177-181
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• 1997

Epitaxial films of cubic silicon carbide (3C-SiC, $\beta$-SiC) have been grown on Si(001) and Si(111) substrates by high vacuum chemical vapor deposition using the single precursor 1,3-disilabutane, $H_3SiCH_2SiH_2CH_3$, at temperatures 900~$100^{\circ}C$. The advantage of using the single precursor over the covnentional chemical vapor deposition is evident in that the source chemical is safe to handle, carbonization of the substrates is not necessary, accurate stoichiometry of the silicon carbide films is easily achieved, and the deposition temperature is much lowered. The films were characterized by XPS, XRD, SEM, RHEED, RBS, AES, and TED.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.480-484
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• 2004

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2148-2150
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• 2014

• Bulletin of the Korean Chemical Society
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• v.27 no.1
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• pp.147-149
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• 2006

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Biotechnology and Bioprocess Engineering:BBE
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• v.6 no.2
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• pp.144-149
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• 2001

For the production and purification of a single chain human insulin precursor, four types of fusion peptides $\beta$-galactosidase (LacZ), maltose binding protein (MBP), glutathione-S-transferase (GST), and (His)(sub)6-tagged sequence (HTS) were investigated. Recombinant E. coli harboring hybrid genes was cultivated at 37$\^{C}$ for 1h, and gene induction occurred when 0.2mM of isopropyl-D-thiogalactoside (IPTG) was added to the culture broth, except for E. coli BL21 (DE3) pLysS harboring a pET-BA cultivation with 1.0mM IPTG, followed by a longer than 4h batch fermentation respectively. DEAE-Sphacel and Sephadex G-200 gel filtration chromatography, amylose affinity chromatography, glutathione-sepharose 4B affinity chromatography, and a nickel chelating affinity chromatography system as a kind of immobilized metal ion affinity chromatography (IMAC) were all employed for the purification of a single chain human insulin precursor. The recovery yields of the HTS-fused, GST-fused, MBP-fused, and LacZ-fused single chain human insulin precursors resulted in 47%, 20%, 20%, and 18% as the total protein amounts respectively. These results show that a higher recovery yield of the finally purified recombinant peptides was achieved when affinity column chromatography was employed and when the fused peptide had a smaller molecular weight. In addition the pET expression system gave the highest productivity of a fused insulin precursor due to a two-step regulation of the gene expression, and the HTS-fused system provided the highest recovery of a fused insulin precursor based on a simple and specific separation using the IMAC technique.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.114-118
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• 2009

A new Zn/O single source precursor, TMEDA-Zn$(eacac)_2$, has been synthesized by using N, N, N’, N’-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and $ZnCl_2$. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ${^{\circ}C}$. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Journal of the Korean Ceramic Society
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• v.38 no.8
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• pp.761-764
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• 2001

새로운 AlN 박막 제조용 단일 전구체로 AlCl$_3$: $^{t}$ BuNH$_2$을 합성하였다. c축으로 배향된 AlN 박막을 80$0^{\circ}C$에서 사파이어(0006) 단결정 위에 MOCVD 공정으로 증착시켰다. 본 전구체를 사용함으로 박막내의 잔류탄소 및 산소의 오염을 크게 낮출수 있었으며 Al:N의 비율이 1:1인 화학량론비의 AlN 박막을 제조할 수 있었다. 단일 전구체의 결정 구조는 단결정 X선 구조분석과 원소분석을 통하여 규명하였으며 박막분석은 SEM, XRD, SEM, AFM과 RBS 등으로 행하였다.

• Progress in Superconductivity and Cryogenics
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• v.10 no.1
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• pp.6-9
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• 2008

We have investigated the MOD process successfully for the fabrication of the YBCO thick film on the $LaAlO_3$(001) single crystalline substrate. The cracking problem in YBCO thick film, a serious problem in the conventional TFA-MOD method, could be overcome with a careful control of precursor materials. Thus coating solution was prepared for the YBCO thick film by using fluorine-free precursor material. The precursor solutions were coated on the LAO(001) single crystalline substrate using the dip coating method, calcined at the temperature up to $500^{\circ}C$, and fired at various high temperatures for 2 h in a reduced oxygen atmosphere. Optimally processed YBCO thick film exhibited high critical current($I_c$) over 200 A/cm-width at 77K in self-field.