The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Fabrication of InP/InGaAs HPT's with ITO Emitter Contacts

ITO 에미터 투명전극을 갖는 InP/InGaAs HPT 제작

  • 강민수 (LG電子 技術院 유기EL 事業擔當 모델開發그룹) ;
  • 한교용 (嶺南大學校 電子情報工學部)
  • Published : 2002.11.01
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Abstract

In this paper, Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter contacts were fabricated. The ITO ohmic contacts were realized by employing thin imdium layer between the ITO and $n^+$-InP layers. The ITO contact was annealed at $250^{\circ}C$. The specific contact resistance of about $6.6{\times}10^{-4}{\Omega}cm^2$ was measured by use of the transmission line model (TLM). Heterojunction bipolar transistors (HBTs) having the same device layout were fabricated to compare with HPTs. The DC characteristics of the InP/InGaAs HPT showed the similar electrical characteristics of the HBT. Emitter contact resistance($R_E$) of about $6.4{\Omega}$ was extracted, which was very similar to that of the HBT. The optical characteristics of HPT's were generated by illuminating the device with light from $1.3{\mu}m$ light. It showed that HPT's can be controlled optically.

Keywords

References

  1. Richard N. Nottenburg, Member, IEEE, Y. K. Chen, Morton B. Panish, Senior Member, IEEE, D. A. Humphrey, and R. Hamm, 'Hot-Electron InGaAs/InP Heterostructure Bipolar Transistors with fT of 110GHZ' IEEE Electron Device Letters, Vol. 10, NO. 1. January(1989) https://doi.org/10.1109/55.31672
  2. Minoru Ida, Member, IEEE, Shoji Yamahata, Member, IEEE, Kenji Kurishima, Hiroshi Ito, Member, IEEE, Takashi Kobayashi, and Yutaka Matsuoka, Member, IEEE, 'Enhancement of fmax in InP/InGaAs HBT's by Selective MOCVD Growth of Heavily-Doped Extrinsic Base Regions', IEEE Transactions on Electron Devices, Vol. 43, NO. 11, November(1996)
  3. Mheical Y. Frankel et al, 'Analysis of ultrafast photo carrier transport in AllnAs-GalnAs heterojunction bipolar transistor', IEEE J. Quantum Electron.,Vol. 31, no. 2, pp278-285, February (1995) https://doi.org/10.1109/3.348056
  4. U. Eriksson, P. Evaldsson, J. Wallin, B. Stalnacke, S. Lourdudoss, and B. Willen, 'Vertical integration of an InGaAs/InP HBT and a 1.55${\mu}m$ strained MQW po-substrate laser', IEE Proc.-Optoelectron., Vol. 143, no 1, pp 107-109, February 1996 https://doi.org/10.1049/ip-opt:19960130
  5. Fritz Schuermeyer, Peter J. Zampardi, and Peter M. Asbeck. 'InP-Based HBTs For Optical Signal Detection', Electrochemical Society Proceedings Volume 98-2.
  6. H. Fukano, Member, IEEE, Y. Takanashi, Member, IEEE, and M. Fujimoto, Member, IEEE, 'High-Speed InP-InGaAs Heterojunction Phototransistors Employing a Nonalloyed Electrode Metal as a Reflector', IEEE Journal of Quantum Electronics, Vol. 30, No. 12, December(1994) https://doi.org/10.1109/3.362721
  7. Paul Freeman, Xiangkun Zhang, Igor Vurgaftman, Jasprit Singh, Member, IEEE, and Pallab Bhattacharya, Fellow, IEEE, 'Optical Control of 14GHZ MMIC Oscillators Based on InAlAs/InGaAs HBT's with Monolithically Intergrated Optical Waveguides', IEEE Transactions on Electron Devices, Vol. 43, NO. 3, March(1996) https://doi.org/10.1109/16.485649
  8. Shabbir A. Bashar, and Ali A. Rezazadeh , Member, IEEE. 'Optically Transparent ITO Emitter contacts in the Fabrication of InP/InGaAs HPTs', IEEE Transactions On Microwave Theory and Techniques. Vol. 43, No. 9, September (1995). https://doi.org/10.1109/22.414581
  9. S. A. Basher et al, 'Fabrication and spectral response analysis of AlGaAs/GaAs and InP/InGaAs HPTs with transparent ITO emitter contacts', IEE proc.- Optoelectron, Vol. 143, No.