한국안전학회지 (Journal of the Korean Society of Safety)

  • 제17권4호
  • /
  • Pages.94-100
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  • 2002
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  • 1738-3803(pISSN)
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  • 2383-9953(eISSN)
한국안전학회 (The Korean Society of Safety)
권호 표지

패키지 반도체소자의 ESD 손상에 대한 실험적 연구

Experimental Investigation of the Electrostatic Discharge(ESD) Damage in Packaged Semiconductor Devices

  • Kim, Sang-Ryull (Department of Occupational Health, Andong Science College) ;
  • Kim, Doo-Hyun (Department of Safety Engineering, Chungbuk National University) ;
  • Kang, Dong-Kyu (Department of Safety Engineering, Chungbuk National University)
  • 발행 : 2002.12.01
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초록

As the use of automatic handling equipment for sensitive semiconductor devices is rapidly increased, manufacturers of electronic components and equipments need to be more alert to the problem of electrostatic discharges(ESD). In order to analyze damage characteristics of semiconductor device damaged by ESD, this study adopts a new charged-device model(CDM), field-induced charged model(FCDM) simulator that is suitable for rapid, routine testing of semiconductor devices and provides a fast and inexpensive test that faithfully represents ESD hazards in plants. High voltage applied to the device under test is raised by the field of non-contacting electrodes in the FCDM simulator, which avoids premature device stressing and permits a faster test cycle. Discharge current and time are measured and calculated. The characteristics of electrostatic attenuation of domestic semiconductor devices are investigated to evaluate the ESD phenomena in the semiconductors. Also, the field charging mechanism, the device thresholds and failure modes are investigated and analyzed. The damaged devices obtained in the simulator are analyzed and evaluated by SEM. The results obtained in this paper can be used to prevent semiconductor devices form ESD hazards and be a foundation of research area and industry relevant to ESD phenomena.

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참고문헌

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