대한전기학회논문지:전기물성ㆍ응용부문C (The Transactions of the Korean Institute of Electrical Engineers C)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

NMOSFET의 반전층 양자 효과에 관한 연구

Analysis of Invesion Layer Quantization Effects in NMOSFETs

  • 박지선 (이화여자대학교 정보통신학과) ;
  • 신형순 (이화여자대학교 정보통신학과)
  • Park, Ji-Seon (Dept.of Information communication, Ewah Wonan's University) ;
  • Sin, Hyeong-Sun (Dept.of Information communication, Ewah Wonan's University)
  • 발행 : 2002.09.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

키워드

참고문헌

  1. International Technology Roadmap for Semiconductor, 2000
  2. X. Hyuang et al., 'Sub 50-nm FinFET: PMOS', IEDM, pp. 67, 1999 https://doi.org/10.1109/IEDM.1999.823848
  3. W. Hansch et al., 'Carrier Transport near the Si/SiO2 Interface of a MOSFET', Solid-State Electronics, vol. 32, pp. 839, 1989 https://doi.org/10.1016/0038-1101(89)90060-9
  4. M.J. van Dort et al., 'Influence of High Substrate Doping Levels on the Threshold Voltage and the Mobility of Deep-Submicrometer MOSFET's', IEEE Trans. on Elect. Dev., vol. 39, pp. 932, 1992 https://doi.org/10.1109/16.127485
  5. MEDICI Manual(version 4.0.0)
  6. Frank Stern,'Self-consistent results for n-type Si inversion layers', Phys. Rev. B, vol. 5, no. 12, pp. 4891, 1972 https://doi.org/10.1103/PhysRevB.5.4891
  7. Charles Kittel, 'Introduction to Solid State Physics,' Wiley, 1996
  8. Ya-Chin King, Chenming Hu, 'Small Signal Electron charge centroid model for quantization of inversion layer in a metal-on-insulator field-effect transistor,' Appl. Phys. Lett., vol 72, no. 26, pp. 3476, 1988 https://doi.org/10.1063/1.121671
  9. Brian K. Ip, John R. Brews, 'Quantum Effects upon Drain Current in a Biased MOSFET,' IEEE Trans. on Elect. Dev., vol. 45, no. 10, pp. 2213., 1998 https://doi.org/10.1109/16.725256
  10. Tomasz Janik, Bgdan Majkusiak, 'Analysis of the MOS Transistor Based on the Self-consistent Solution to the Schrodinger and Poisson Equations and on the Local Mobility Model,' IEEE Trans. on Elect. Dev., vol. 45, no. 6, pp.1263., 1998 https://doi.org/10.1109/16.678531
  11. Scott A. Hareland et al., 'A Computationally Effecient Model for Inversion Layer Quantization Effects in Deep Submicron N-Channel MOSFET's,' IEEE Trans. on Elect. Dev., vol. 45, no. 1, pp. 90., 1996 https://doi.org/10.1109/16.477597