• 전기전자학회논문지
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• 제16권4호
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• pp.283-289
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• 2012

이 논문에서 Trench Power MOSFET의 스위칭 성능을 향상시키기 위한 Separate Gate Technique(SGT)을 제안하였다. Trench Power MOSFET의 스위칭 성능을 개선시키기 위해서는 낮은 gate-to-drain 전하 (Miller 전하)가 요구된다. 이를 위하여 제안된 separate gate technique은 얇은(~500A)의 poly-si을 deposition하여 sidewall을 형성함으로서, 기존의 Trench MOSFET에 비해 얇은 gate를 형성하였다. 이 효과로 gate와 drain에 overlap 되는 면적을 줄일 수 있어 gate bottom에 쌓이는 Qgd를 감소시키는 효과를 얻었고, 이에 따른 전기적인 특성을 Silvaco T-CAD silmulation tool을 이용하여 일반적인 Trench MOSFET과 성능을 비교하였다. 그 결과 Ciss(input capacitance : Cgs+Cgd), Coss(output capacitance : Cgd+Cds) 및 Crss(reverse recovery capacitance : Cgd) 모두 개선되었으며, 각각 14.3%, 23%, 30%의 capacitance 감소 효과를 확인하였다. 또한 inverter circuit을 구성하여, Qgd와 capacitance 감소로 인한 24%의 reverse recovery time의 성능향상을 확인하였다. 또한 제안된 소자는 기존 소자와 비교하여 어떠한 전기적 특성저하 없이 공정이 가능하다.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2003년도 추계학술대회
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• pp.343-350
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• 2003

The best Ppy weight ratio was 7 wt% and the optimal electrode composition ratio was 78 : 17 : 5 wt.% of (MSP-20 : BP-20 =1 : 1), (Super P : Ppy =10 : 7) and P(VdF-co-HFP). Implantation of Ppy as the conducting agents have led to superior electrochemical characteristics because of the low of internal resistance and faradaic capacitance. The result of unit cell with Ppy 7 wt% were as follows: 28.02 Fig of specific capacitance, 1.34 Ω of DC-ESR and 0.36 Ω of AC-ESR. Unit cell showed a good stability up to 200 charge-discharge cycles, retaining 82% of their original capacity at 200 cycles. From the analysis of impedance, the electrodes with Ppy 7 wt% showed low ESR, low charge transfer resistance and quick reaction rate. It was inferred that quick charge-discharge was possible. As compared with the specific capacitance (rectangular shape) of CV, it was also concluded that the specific capacitance originated from thecompound phenomena of the faradaic capacitance by oxidation and reduction of Ppy and the non-faradaic capacitance by adsorption-desorption of activated carbon.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권2호
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• pp.130-133
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• 2011

A comparative study of two capacitance methods to measure the effective channel length in deep-submicron MOSFETs has been made in detail. Since the reduction of the overlap capacitance in the accumulation region is smaller than the addition of the inner fringe capacitance at zero gate voltage, the capacitance method removing the parasitic capacitance in the accumulation region extracts a more accurate effective channel length than the method removing that at zero gate voltage.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.232-232
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• 2000

switched reluctance motors and drives are increasingly used in industrial applications due to their robust mechanical structure, low inertia and reduction in the rotor losses. As the motor speed increase turn on angle must be advanced to build up phase current. When C-dump converter is applied to switched reluctance motor, the capacitance of dump C has to have proper value. In this paper advance angle for a switched reluctance motor and capacitance of dump C are investigated. Then proper advance angle and the capacitance of dump-C are propose for the industrial low voltage SR motor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.9-13
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• 1995

The effect of WO$_3$ addition and sintering condition on the electrical properties of SrTiO$_3$ceramic have been investigated. Resistivity and capacitance of grains and grain boundaries were obtained by applying impedance spectroscopy. From the result it could be concluded that the temperature dependance of capacitance of WO$_3$doped specimens were influenced directly by the variation of grain boundary capacitance. It was also found that the dispersion frequency increased as the degree of reduction of the specimen increased. The dispersion frequency characteristics showed discernably that the resistivity of the specimen varied with WO$_3$ content. The dielectric properties were influenced directly by the reduction of the specimens. The dielectric constant of grain boundaries of BL capacitor could be obtained by Cole-Cole plot and was influeneced by the amount of WO$_3$ added.

• 전자공학회논문지
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• 제53권4호
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• pp.136-141
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• 2016

본 논문에서는 Current Modulator를 이용하여 루프 필터 커패시턴스 유효 용량을 배가 시켜 칩 크기를 줄일 수 있는 위상 고정루프를 제안하였다. 제안된 위상고정루프에서는 Current Modulator로 루프 필터의 커패시턴스 유효 용량을 배가 시켜 루프 필터 커패시터 크기를 1/10로 줄였다. 제안된 위상고정루프는 1.8V $0.18{\mu}m$ CMOS 공정을 이용하여 설계되었다. 시뮬레이션 결과는 기존 구조와 같은 잡음 특성과 위상고정 시간을 보여주었다.

• ETRI Journal
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• 제32권1호
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• pp.68-72
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• 2010

The coupling between the transverse and longitudinal components of the channel electron motion in NMOS devices leads to a reduction in the barrier height. Therefore, this study theoretically investigates the effects of the in-plane velocity of channel electrons on the capacitance-voltage characteristics of nano NMOS devices under inversion bias. Numerical calculation via a self-consistent solution to the coupled Schrodinger equation and Poisson equation is used in the investigation. The results demonstrate that such a coupling largely affects capacitance-voltage characteristic when the in-plane velocity of channel electrons is high. The ballistic transport ensures a high in-plane momentum. It suggests that such a coupling should be considered in the quantum capacitance-voltage modeling in ballistic transport devices.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 춘계학술대회
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• pp.698-701
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• 2016

본 논문에서는 Current Modulator를 이용하여 루프 필터 커패시턴스 유효 용량을 배가 시켜 칩 크기를 줄일 수 있는 위상고정루프를 제안하였다. 제안된 위상고정루프에서는 Current Modulator로 루프 필터의 커패시턴스 유효 용량을 배가 시켜 루프 필터 커패시터 크기를 1/10로 줄였다. 제안된 위상고정루프는 1.8V $0.18{\mu}m$ CMOS 공정을 이용하여 설계되었다. 시뮬레이션 결과는 기존 구조와 같은 잡음 특성과 위상고정 시간을 보여주었다.

• 한국대기환경학회지
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• 제15권4호
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• pp.475-483
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• 1999

A lab-scale test was carried out to study the reduction of electrical energy consumption in the pulsed corona discharge process for nitrogen oxides removal. The experiment was mainly focused on 1) the activation of pollution removal reactions by chemical additives and 2) the optimization of electrical circuit for the efficient energy transfer from the power supply to the corona reactor. Hydrocarbon chemical additives used in the experiment are thought to be responsible for the enhancement of the NO conversion through the chain reactions of free radicals such as, R, RCO, and RO. Electrical energy consumption per converted NO molecule has a minimum value of 17 eV when pentanol is injected. When ethylene and propylene are injected, 30 eV and 22 eV of electrical energy consumption is required for the conversion of NO molecule respectively. The ratio of the pulse forming capacitance$(C_e)$ to the reactor capacitance$(C_R)$ plays an important role in the energy transfer efficiency to the reactor. Maximum energy transfer efficiency of approximately 72% could be obtained by using the pulse forming capacitance which is 3.4 times larger than the reactor capacitance, and also the maximum NO conversion efficiency was observed with the same condition.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제55권8호
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• pp.389-395
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• 2006

In the single-phase switched reluctance motor (SRM) drive, the required DC source is generally supplied by the circuit consisting of bridge rectifier with diodes and many filter capacitances connected with AC source. Although the peak torque ripple of SRM is small because of large capacity of the capacitance, the charge and discharge time swhich the AC source acts on the capacitance are small and the peak current will pass on the side of source, so power factor and system efficiency decrease. Therefore a novel SRM drive system is presented in this paper, which includes drive circuit realizing reduction of torque ripple and improvement of power factor and switching topology. The proposed drive circuit consists of one switching part and diodes which can separate the output of AC/DC rectifier from the large capacitance and supply power to SRM alternately in order to realize reduction of torque ripple and improvement of power factor through the turn on and turn off of switching part. In addition, the validity of method is tested by simulation and experiment.