프로그램 가능한 논리 회로 구성을 위한 PIP 앤티퓨즈의 전기적 특성

Electrical Characteristics of the PIP Antifuse for Configuration of the Programmable Logic Circuit

  • 김필중 (성화대학 인터넷통신과) ;
  • 윤중현 (조선대학교 전자공학과) ;
  • 김종빈 (조선대학교 전자공학과)
  • 발행 : 2001.12.01

초록

The antifuse is a semi-permanent memory device like a ROM which shows the open or short state, and a switch device connecting logic blocks selectively in FPGA. In addition, the antifuse has been used as a logic device to troubleshoot defective memory cells arising from SDRAM processing. In this study, we have fabricated ONO antifuses consisted of PIP structure. The antifuse shows a high resistance more than several G Ω in the normal state, and shows a low resistance less than 500 Ω after program. The program resistance variation according to temperature shows the very stable value of $\pm$20 Ω. At this time, its program voltage shows 6.7∼7.2 V and the program is performed within 1 second. Therefore this result shows that the PIP antifuse is a very stable and programmable logic device.

키워드

참고문헌

  1. 전자공학회논문지 v.35 no.7 과잉 Ti 성분의 티탄산 바륨과 실리콘 산화막으로 구성된 안티퓨즈 이재성;이용현
  2. The Solid Films v.288 Investigation of link formation in a novel planar-type antifuse structure J.T.Baek;H.H.Park;S.W.Kang;B.T.Ahn;I.J.Yoo
  3. IEEE Electron Device Letters v.15 no.8 Metal-to-Metal Antifuses with Very Thin Silicon Dioxide Films G.Zhang;C.Hu;P.Yu;S.Chiang;E.Hamdy
  4. Solid State Technology Quick-turn MCMs H.Stopper;J.Banker;R.Miller
  5. IEEE J.of Solid-State Circuits v.31 no.4 Fault-Tolerant Designs for 256 Mb DRAM T.Kirihata;Y.Watanabe;Y.Asao
  6. 전기전자재료 v.11 no.2 DRAM 기술의 발전 및 커패시터 재료의 연구 동향 이병수
  7. 전기전자재료학회지 v.9 no.5 L/L 진공시스템을 이용한 적층캐패시터의 하충산화막 박막화에 대한 연구 정양희;김명규
  8. 전기전자재료 v.14 no.1 Silicon 박막의 특성과 제조기술 그리고 다양한 소자 응용 이준신
  9. IEEE Electron Device Letters v.19 no.1 Laser Energy Limitation for Buried Metal Cuts Joseph B.Bernstein