Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Annealing Effects on $Q_{BD}$ of Ultra-Thin Gate Oxide Grown on Nitrogen Implanted Silicon

열처리 효과가 질소이온주입후에 성장시킨 산화막의 $Q_{BD}$ 특성에 미치는 영향

  • Nam, In-Ho (Dept.of Electronics Engineering, Seoul National University) ;
  • Hong, Seong-In (Dept.of Electronics Engineering, Seoul National University) ;
  • Sim, Jae-Seong (Dept.of Electronics Engineering, Seoul National University) ;
  • Park, Byeong-Guk (Dept.of Electronics Engineering, Seoul National University) ;
  • Lee, Jong-Deok (Dept.of Electronics Engineering, Seoul National University)
  • Published : 2000.03.01
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Abstract

Ultra-thin gate oxide was grown on nitrogen implanted silicon substrates. For nitrogen implantation, the energy was fixed at 25keV, but the dose was split into 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$. The grown gate oxide thickness were 2nm, 3nm and 4nm. The oxidation time to grow 3nm was increased by 20% and 50% for the implanted wafers of 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$ doses, respectively, when it was compared with control wafers which were not implanted by nitrogen. The value of charge-to-breakdown ( $Q_{BD}$ ) is decreased with increasing nitrogen doses. If an annealing process( $N_{2}$, 85$0^{\circ}C$, 60min.) is peformed after nitrogen implantation, $Q_{BD}$ is increased. It is indicated that nitrogen implantation damage affect gate oxide reliability and the damage can be removed by post-implantation annealing process.

실리콘 기판에 질소를 이온주입한 다음에 게이트 산화막을 2nm, 3nm, 4nm 두께로 성장시켰다. 질소이온주입 에너지는 25keV로 고정하였고 이온주입량은 5.0×10/sup l3//cm/sup 2/과1.0×10/sup 14//cm/sup 2/으로 나누어서 진행하였다. 질소이온주입량과 산화막의 성장률은 밀접한 관계가 있으며 질소이온주입량이 많아지면 산화막의 성장시간이 늘어난다. 같은 두께를 기르는데 필요한 산화시간을 질소이온주입을 하지 않은 경우와 비교하면 질소이온 주입량이 5.0×10/sup 13//cm/sup 2/ 일 때는 약 20%, 1.0×10/sup 14//cm/sup 2/일 때는 약 50% 정도 산화시간이 증가한다. 질소이온 주입량이 증가함에 따라 Q/sub BD/값은 감소하는데 이의 개선을 위해 질소이온주입후에 N/sub 2/분위기에서 850℃ 60분간 열처리를 한 다음 산화막을 성장시키면 Q/sub BD/값이 증가하여 개선됨을 보인다. 이것은 질소이온주입으로 인한 손상이 게이트 산화막의 신뢰성에 나쁜 영향을 미치지만 이온주입직후에 적절한 열처리 공정을 거치면 이러한 손상으로 인한 영향을 없앨 수 있다는 것을 의미한다.

Keywords

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