Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of MBE Growth Temperature on the Sulfur Compositional Variation Of ZnSSe Epitaxial Layers on GaAs Substrates

  • Kim, Dong-Lyeul (Department of Physis, Yeungnam University) ;
  • Bae, In-Ho (Department of Physis, Yeungnam University) ;
  • Son, Jeong-Sik (School of Architecture, Environment, and Life Science Kyungwoon Univeristy) ;
  • Kim, In-Su (Department of Electronic Engineering, Kyungwoon University,) ;
  • Lee, Jae-Young m (Material Evaluation Center, Korea Research Institute of Standards and Science) ;
  • Akira Yoshida (Department of Electronics, Engineering,Toyohashi University of Technology)
  • Published : 2000.09.01
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Abstract

In this work, we reported the sulfur compositional variation of ZnS$\_$x/Se$\_$1-x/ epitaxial layers with growth temperature and BEP ration of ZnX/Se/)P$\_$ZnS//P$\_$Se/) grown on GaAs substrates by molecular beam epitaxy. The sulfur composition of ZnSSe epitaxial layers was varied sensitively on the growth temperature and show different linear relationship with growth temperature and BEP ration of ZnS/Se(P$\_$ZnS//P$\_$Se/), which revealed -0.107 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.30 and -0.052 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.158 rspectively. A reference data for the accurate control of the sulfur composition and the growth of high quality ZnSSe/GaAs epitaxial layers was provided.

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