Passivation Effects of Excimer-Laser-Induced Fluorine using $SiO_{x}F_{y}$ Pad Layer on Electrical Characteristics and Stability of Poly-Si TFTs

$SiO_{x}F_{y}$/a-Si 구조에 엑시머 레이저 조사에 의해 불소화된 다결정 실리콘 박막 트랜지스터의 전기적 특성과 신뢰도 향상

  • Kim, Cheon-Hong (Dept.of Electric Engineering, Seoul National University) ;
  • Jeon, Jae-Hong (Dept.of Electric Engineering, Seoul National University) ;
  • Yu, Jun-Seok (Dept.of Electric Engineering, Seoul National University) ;
  • Han, Min-Gu (Dept.of Electric Engineering, Seoul National University)
  • Published : 1999.09.01

Abstract

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

Keywords

References

  1. IEEE J. Solid-State Circuits v.27 Polysilicon TFT Circuit Design and Performance A.G. Lewis;D.D. Lee;R.H. Bruce
  2. Japan Display v.92 Poly-Si TFT Devices and Their Application to LCDs A.H. Firester;W.R. Roach;R.Stewart
  3. IEEE Electron Device Lett. v.EDL-1 Hydrogenation of Transistors Fabricated in Polycrystalline Silicon Films T. I. Kamins;P. J. Marcoux
  4. IEEE Electron Device Lett. v.EDL-12 Passivation Kinetics of Two Types of Defects in Polysilicon TFT by Plasma Hydrogenation I. W. Wu;T. Y. Huang;W. B. Jackson;A. G. Lewis;A. Ciang
  5. IEEE Trans. Electron Devices v.ED-41 no.5 The Effects of Fluorine Passivation on Polysilicon Thin-Film Transistors H. N. Chern;C. L. Lee;T. F. Lei
  6. Jpn. J. Appl. Phys. v.34 no.3 Effects of F Implantation on the Characteristics of Poly-Si Films and Low-Temperature n-ch Poly-Si Thin-Film Transistors J. W. Park;B. T. Ahn;K. Lee
  7. Jpn. J. Appl. Phys. v.31 Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films D. H. Choi;K. Shimizu;O. Sugiura;M. Matsumura
  8. IEEE Trans. Electron Devices v.ED-35 Hot-Carrier Degradation of n-Channel Polysilicon MOSFETs S. Banerjee;R.Sundaresan;H. Shichijo;S. Malhi
  9. IEEE Electron Device Lett. v.EDL-11 Mechanism of Device Degradation in n- and p-Channel Polysilicon TFTs By Electrical Stressing I. W. Wu;W. B. Jackson;T. Y. Huang;A. G. Lewis;A. Ciang
  10. Jpn. J. Appl. Phys. v.33 Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide T. Usami;K. Shimokawa;M. Yosimaru
  11. J. Electrochem. Soc. v.134 no.7 Advaced Superthin Polysilicon Film Obtained by $Si^+$ Implantation and Subsequent Annealing T. Noguchi;H. Hayashi;T. Oshima
  12. J. Opt. Soc. Am. v.51 no.2 Relation Between Surface Roughness and Specular Reflectance at Normal Incidence H. E. Bennett;J. O. Porteus